$1.46
$1.42
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
Microchip N-Channel MOSFET, Enhancement Mode, 260 mA, 400 V, 3-Pin TO-243 Package TN2540N8-G
Specifications
| Country of Origin | India |
|---|---|
| Brand | Microchip |
| Height | 1.6mm |
| Length | 4.6mm |
| Model | TN2540N8-G |
| Width | 2.6mm |
| Mount Type | Surface |
| Series | TN2540 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-243 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 260mA |
| Maximum Drain Source Voltage Vds | 400V |
| Maximum Drain Source Resistance Rds | 12Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.6W |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.8V |
Key Features
- Designed with vertical DMOS technology for robust power handling.
- Offers high input impedance and low input capacitance for efficient switching.
- Supports maximum power dissipation of 1.6 W.
- Surface mount device with a compact 3-pin TO-243 package.
- Operates reliably between -55°C and 150°C.
- Maximum gate-source voltage is rated at 20 V.
- Low on-resistance of 12 ohms to minimize power loss.
- Forward voltage of 1.8 V supports efficient conduction.
Product Description
Microchip TN2540N8-G is a low threshold, enhancement-mode N-Channel MOSFET built using vertical DMOS technology and a silicon-gate process. This design combines the power handling capabilities typical of bipolar transistors with the high input impedance and positive temperature coefficient characteristics inherent in MOS devices.
This device has a maximum continuous drain current of 260 mA and can withstand up to 400 V drain-source voltage, making it suitable for a wide range of switching and amplification uses. It is free from thermal runaway and thermally-induced secondary breakdown, ensuring reliable operation under stress.
The MOSFET features a low input capacitance of 125 pF maximum and fast switching speeds, enhancing efficiency in power-sensitive circuits. It has a surface mount 3-pin TO-243 package with compact dimensions of 4.6 mm length, 2.6 mm width, and 1.6 mm height, suitable for space-constrained electronic assemblies.
Operating temperatures range from -55°C to 150°C, with a maximum gate-source voltage of 20 V. The device supports a maximum power dissipation of 1.6 W and features a low on-resistance of 12 ohms, which minimizes conduction losses.
This N-Channel MOSFET is ideal for industrial control circuits, power management systems, and electronic instrumentation. Its robust design supports applications requiring high voltage tolerance and efficient switching capabilities.
Designed with vertical DMOS technology for robust power handling. Offers high input impedance and low input capacitance for efficient switching. Supports maximum power dissipation of 1.6 W. Surface mount device with a compact 3-pin TO-243 package.
Operates reliably between -55°C and 150°C. Maximum gate-source voltage is rated at 20 V. Low on-resistance of 12 ohms to minimize power loss. Forward voltage of 1.8 V supports efficient conduction. Free from thermal runaway and secondary breakdown.
Suitable for industrial, laboratory, and electronics manufacturing applications. Explore more electronics components and semiconductors on EnvMart to meet your design and manufacturing needs.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current for the TN2540N8-G is 260 mA.
This model can withstand a maximum drain-source voltage of 400 V.
The dimensions of the TO-243 package are 4.6 mm in length, 2.6 mm in width, and 1.6 mm in height.
The operating temperature range for the TN2540N8-G is from -55°C to 150°C.
The maximum power dissipation for this device is 1.6 W.
The maximum gate-source voltage rating for this MOSFET is 20 V.
This MOSFET uses surface mount technology.
The on-resistance of this model is 12 ohms.
The forward voltage for the TN2540N8-G is 1.8 V.
This MOSFET has an N-channel type.
This MOSFET is designed using vertical DMOS technology.
The TN2540N8-G is suitable for industrial control circuits, power management systems, and electronic instrumentation.
Related Products
$23.16
$20.22
-12.7%
Other Products from this brand
$2.75
$2.67
-3%
New
Recently Viewed Products
$0.09
$0.08
-3%
New
$0.12
$0.11
-3%
New
$1.46
$1.42
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent