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OSI Optoelectronics Infrared Photodiode, 65 Degree Field of View, Through Hole TO-5 Package FCI-InGaAs-Q1000

Category Photodiode Brand OSI Optoelectronics Condition New

Specifications

Country of Origin United States
Diameter 9.14mm
Brand OSI Optoelectronics
Height 4.16mm
Length 1.49mm
Model FCI-InGaAs-Q1000
Packaging Tape & Reel
Width 1.25mm
Mount Type Through Hole
Series FCI-InGaAS
Maximum Operating Temperature 85°C
Package Type TO-5
Minimum Operating Temperature -25°C
Polarity Forward
Dark Current 0.5nA
Standards/Approvals RoHS
Number of Pins 5
Typical Fall Time 3ns
Wavelength of Peak Sensitivity 1700nm
Spectrums Detected Infrared
Breakdown Voltage 30V
Minimum Wavelength Detected 900nm
Maximum Wavelength Detected 1700nm
Angle of Half Sensitivity 65 °

Key Features

  • Detects infrared spectrums with peak sensitivity at 1700nm.
  • Features a wide spectral response from 900nm to 1700nm.
  • Equipped with 5 pins and packaged for tape and reel mounting.
  • Offers a fast rise and fall time of 3 nanoseconds for high-speed applications.
  • Operates reliably between temperatures of -25°C to 85°C.
  • Exhibits low dark current of 0.5 nanoamperes ensuring low noise performance.
  • Has a breakdown voltage rating of 30 volts and forward polarity.
  • Constructed in a TO-5 package with dimensions suitable for precision mounting.

Product Description

OSI Optoelectronics FCI-InGaAs-Q1000 Infrared Photodiode offers a large active area segmented into four separate regions, designed specifically for accurate nulling, centering, and beam profiling in industrial and scientific applications. The 65 degree field of view and through hole TO-5 package enable precise positioning and mounting flexibility.

This photodiode exhibits excellent responsivity over a broad spectral range from 900nm to 1700nm, peaking at 1700nm, making it ideal for infrared sensing applications including position sensing, beam alignment, and beam profiling. It provides low noise detection with minimal cross-talk between elements, suited for pulse and high-speed operations.

The device features a fast response time with typical rise and fall times of 3 nanoseconds, ensuring quick signal acquisition. It operates across a temperature range from -25°C to 85°C, maintaining stability over time and temperature for industrial, laboratory, and manufacturing use.

The robust TO-5 package, with a diameter of 9.14mm, height of 4.16mm, length of 1.49mm, and width of 1.25mm, ensures durability while maintaining compactness. It comes in tape and reel packaging for automated assembly lines. It meets RoHS compliance standards, affirming its adherence to environmental and safety regulations.

Applications include industrial position and beam sensors, laboratory instrumentation, and advanced optical measurement systems. This photodiode provides reliable and precise infrared detection with low noise and excellent uniformity, making it a valuable component in complex sensing environments.

Detects infrared spectrums with peak sensitivity at 1700nm. Wide spectral range from 900nm to 1700nm with low cross-talk. Fast response times of 3ns rise and fall for pulse detection. Robust TO-5 package with 5 pins for through hole mounting.

Operates from -25°C to 85°C ensuring industrial reliability. Low dark current of 0.5nA for enhanced noise performance. Complies with RoHS environmental standards. Manufactured in the United States for assured quality. Explore the OSI Optoelectronics range for advanced Photodiode applications across electronics, manufacturing, and testing instrumentation at EnvMart.

OSI Optoelectronics Infrared Photodiode, 65 Degree Field of View, Through Hole TO-5 Package FCI-InGaAs-Q1000
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Frequently Asked Questions

The photodiode has a peak sensitivity at 1700nm.

It offers a wide spectral response from 900nm to 1700nm.

The TO-5 package has a diameter of 9.14mm, height of 4.16mm, length of 1.49mm, and width of 1.25mm.

It operates reliably between temperatures of -25°C to 85°C.

The dark current is rated at 0.5 nanoamperes, ensuring low noise performance.

This photodiode has a typical rise and fall time of 3 nanoseconds.

It is designed for through-hole mounting with 5 pins.

The breakdown voltage is rated at 30 volts.

It comes packaged for tape and reel mounting, suitable for automated assembly lines.

It complies with RoHS environmental standards.

It is suitable for applications including industrial position sensing, beam alignment, and optical measurement systems.

This photodiode is manufactured in the United States.

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