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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 21.77mm |
| Length | 5.2mm |
| Model | KSD5041RTA |
| Width | 4.19mm |
| Mount Type | Through Hole |
| Series | KSD5041 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-92 |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 20V |
| Minimum DC Current Gain hFE | 180 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 7V |
| Maximum Collector Base Voltage VCBO | 40V |
| Maximum Power Dissipation Pd | 750mW |
| Maximum DC Collector Current Idc | 5A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 1MHz |
onsemi KSD5041RTA is a high-performance NPN bipolar junction transistor designed for discrete semiconductor applications requiring moderate current and voltage handling capabilities. Featuring a maximum collector current of 5 amperes and a maximum collector-emitter voltage of 20 volts, it is ideal for switching and amplification tasks in electronic circuits.
Housed in a TO-92 plastic through-hole package with three pins, this transistor ensures straightforward mounting on PCB assemblies. The transistor provides a minimum DC current gain (hFE) of 180, enabling efficient amplification in signal processing and power control stages.
It offers a maximum power dissipation rating of 750 milliwatts, suitable for medium power electronic components, and an operating temperature range up to 150 degrees Celsius, ensuring reliable performance in various industrial and consumer electronic environments.
The compact physical dimensions (height 21.77 mm, width 4.19 mm, length 5.2 mm) support applications with space constraints. Electrical parameters such as the maximum collector-base voltage of 40 volts and emitter-base voltage of 7 volts add robustness to circuit designs.
This transistor finds applications in industrial electronics, laboratory equipment, consumer devices, and water treatment control systems, among other uses that require reliable switching and amplification with small signal components.
Maximum DC collector current of 5 A. Maximum collector-emitter voltage of 20 V. TO-92 three-pin through-hole package. Minimum DC current gain (hFE) of 180. NPN bipolar transistor with single configuration. Maximum power dissipation 750 mW.
Operating temperature up to 150°C. Compact dimensions for PCB mounting. Explore more Bipolar Transistors and semiconductor components at EnvMart for your industrial, laboratory, and electronics design needs.
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