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onsemi Transistor 5 A NPN 20 V 3-Pin TO-92 Package KSD5041RTA

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 21.77mm
Length 5.2mm
Model KSD5041RTA
Width 4.19mm
Mount Type Through Hole
Series KSD5041
Maximum Operating Temperature 150°C
Package Type TO-92
Pin Count 3
Maximum Collector Emitter Voltage Vceo 20V
Minimum DC Current Gain hFE 180
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 7V
Maximum Collector Base Voltage VCBO 40V
Maximum Power Dissipation Pd 750mW
Maximum DC Collector Current Idc 5A
Transistor Configuration Single
Maximum Transition Frequency ft 1MHz

Key Features

  • Maximum DC collector current is rated at 5 A.
  • Collector-emitter voltage capability of 20 V ensures reliability in medium power circuits.
  • 3-pin TO-92 plastic package allows easy installation on through-hole PCB layouts.
  • Provides a minimum DC current gain (hFE) of 180 for efficient signal amplification.
  • Designed for single transistor configuration with NPN polarity suitable for switching and amplification.
  • Maximum power dissipation of 750 mW supports low to medium power applications.
  • Maximum operating temperature of 150°C assures stability under elevated thermal conditions.

Product Description

onsemi KSD5041RTA is a high-performance NPN bipolar junction transistor designed for discrete semiconductor applications requiring moderate current and voltage handling capabilities. Featuring a maximum collector current of 5 amperes and a maximum collector-emitter voltage of 20 volts, it is ideal for switching and amplification tasks in electronic circuits.

Housed in a TO-92 plastic through-hole package with three pins, this transistor ensures straightforward mounting on PCB assemblies. The transistor provides a minimum DC current gain (hFE) of 180, enabling efficient amplification in signal processing and power control stages.

It offers a maximum power dissipation rating of 750 milliwatts, suitable for medium power electronic components, and an operating temperature range up to 150 degrees Celsius, ensuring reliable performance in various industrial and consumer electronic environments.

The compact physical dimensions (height 21.77 mm, width 4.19 mm, length 5.2 mm) support applications with space constraints. Electrical parameters such as the maximum collector-base voltage of 40 volts and emitter-base voltage of 7 volts add robustness to circuit designs.

This transistor finds applications in industrial electronics, laboratory equipment, consumer devices, and water treatment control systems, among other uses that require reliable switching and amplification with small signal components.

Maximum DC collector current of 5 A. Maximum collector-emitter voltage of 20 V. TO-92 three-pin through-hole package. Minimum DC current gain (hFE) of 180. NPN bipolar transistor with single configuration. Maximum power dissipation 750 mW.

Operating temperature up to 150°C. Compact dimensions for PCB mounting. Explore more Bipolar Transistors and semiconductor components at EnvMart for your industrial, laboratory, and electronics design needs.

onsemi Transistor 5 A NPN 20 V 3-Pin TO-92 Package KSD5041RTA
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Frequently Asked Questions

The maximum DC collector current is rated at 5 A.

It has a collector-emitter voltage capability of 20 V, suitable for medium power circuits.

This transistor is housed in a TO-92 plastic package, designed for through-hole mounting on PCBs.

The transistor provides a minimum DC current gain (hFE) of 180, which is efficient for signal amplification.

It has a maximum power dissipation rating of 750 mW, making it suitable for low to medium power applications.

The maximum operating temperature for this model is 150°C, ensuring stability under elevated thermal conditions.

The dimensions are height 21.77 mm, width 4.19 mm, and length 5.2 mm, making it compact for PCB applications.

The maximum collector-base voltage (VCBO) is 40 V, providing robustness in circuit designs.

The maximum emitter-base voltage (VEBO) is 7 V, which contributes to the transistor's reliability.

This model is designed for a single transistor configuration with NPN polarity, suitable for both switching and amplification.

It is suitable for applications in industrial electronics, laboratory equipment, consumer devices, and water treatment control systems.

The maximum transition frequency (ft) for this transistor is 1 MHz, indicating its capability in high-speed switching applications.

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