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onsemi Small Signal PNP Transistor, 800 mA, 25 V, Surface Mount SOT-23 Package KSA1298YMTF

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onsemi Small Signal PNP Transistor, 800 mA, 25 V, Surface Mount SOT-23 Package KSA1298YMTF

Name: onsemi Small Signal PNP Transistor, 800 mA, 25 V, Surface Mount SOT-23 Package KSA1298YMTF
Brand: onsemi
SKU: 374422
Price: 0.05 USD
Availability: InStock

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Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	0.97mm
Length	2.9mm
Model	KSA1298YMTF
Width	2.4mm
Mount Type	Surface
Maximum Operating Temperature	150°C
Package Type	SOT-23
Pin Count	3
Maximum Collector Emitter Voltage Vceo	25V
Minimum DC Current Gain hFE	40
Transistor Polarity	PNP
Maximum Emitter Base Voltage VEBO	-5V
Maximum Collector Base Voltage VCBO	-30V
Maximum Power Dissipation Pd	200mW
Maximum DC Collector Current Idc	800mA
Transistor Configuration	Single
Maximum Transition Frequency ft	1MHz

Key Features

Capable of handling a maximum DC collector current of 800 mA.
Maximum collector-emitter voltage is rated at 25 volts.
Features a surface mount SOT-23 package with 3 pins for easy PCB integration.
Minimum DC current gain (hFE) is 40, suitable for amplification uses.
Maximum power dissipation up to 200 mW enhances performance reliability.
High maximum operating temperature of 150°C allows for thermal durability.
Pin count is 3, facilitating single transistor configuration applications.
Designed for general purpose bipolar transistor applications in circuits requiring PNP configuration.

Product Description

onsemi KSA1298YMTF is a small-signal PNP transistor designed for surface mounting on printed circuit boards. It supports a maximum collector current of 800 mA and can withstand collector-emitter voltages up to 25 V, making it ideal for low power switching and amplification applications.

The transistor comes in a 3-pin SOT-23 surface mount package, offering a compact footprint suitable for dense electronic assemblies. Its minimum DC current gain of 40 and maximum power dissipation capability of 200 mW ensure efficient performance across a range of applications.

This device operates reliably at temperatures up to 150°C, suitable for demanding industrial and commercial environments. The compact physical dimensions (2.9 mm length, 2.4 mm width, and 0.97 mm height) facilitate high-density PCB designs.

Maximum DC collector current: 800 mA. Maximum collector-emitter voltage: 25 V. Surface mount SOT-23 package with 3 pins. Minimum DC current gain (hFE): 40. Maximum power dissipation: 200 mW. Maximum operating temperature: 150°C.

Compact dimensions: 2.9 x 2.4 x 0.97 mm (L x W x H).

This transistor is suitable for use in industrial, electronic component manufacturing, communications, and consumer electronics circuits that require PNP bipolar junction transistor functionality.

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