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onsemi Small Signal PNP Transistor 800 mA 120 V 3-Pin TO-92 KSA916YTA

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 21.2mm
Length 5.1mm
Model KSA916YTA
Width 4.1mm
Mount Type Through Hole
Maximum Operating Temperature 150°C
Package Type TO-92
Pin Count 3
Maximum Collector Emitter Voltage Vceo 120V
Minimum DC Current Gain hFE 60
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -5V
Maximum Collector Base Voltage VCBO -120V
Maximum Power Dissipation Pd 900mW
Maximum DC Collector Current Idc 800mA
Transistor Configuration Single
Maximum Transition Frequency ft 1MHz

Key Features

  • This transistor features a maximum power dissipation of 900 mW.
  • It supports a minimum DC current gain of 60 ensuring reliable amplification.
  • Designed for through-hole mounting suitable for various electronic circuits.
  • Maximum operating temperature can reach up to 150 degrees Celsius.
  • Compact dimensions of 21.2 mm height, 5.1 mm length, and 4.1 mm width facilitate easy integration.
  • Maximum transition frequency is 1 MHz, supporting various switching applications.
  • Suitable for small signal amplification and switching in industrial and laboratory electronics.
  • Non-automotive with no special approvals or standards, ensuring general-purpose use.

Product Description

The onsemi KSA916YTA is a small signal PNP bipolar transistor designed for various electronic applications requiring moderate current and voltage ratings. With a maximum collector current of 800 mA and collector-emitter voltage of 120 V, it is ideal for switching and amplification tasks in industrial, laboratory, and manufacturing environments. Its single transistor configuration in a compact TO-92 package supports through-hole mounting, facilitating straightforward PCB integration.

This transistor features a maximum power dissipation of 900 mW and a minimum current gain (hFE) of 60, ensuring stable operation in small signal circuits. The maximum operating temperature of 150 degrees Celsius allows for use in demanding environments with moderate heat generation. Its transition frequency of 1 MHz supports moderate switching speeds needed in signal processing and control circuits.

The device's physical dimensions - 21.2 mm height, 5.1 mm length, and 4.1 mm width - make it suitable for space-constrained designs without sacrificing reliability. The transistor’s PNP polarity and maximum emitter-base voltage of -5 V further define its electrical characteristics essential for correct circuit design.

This product is used extensively in electronic component assemblies, power connectors, and discrete semiconductor solutions. Applications include electronic control systems, industrial electronics, laboratory instruments, and general semiconductor usage.

onsemi transistors offer high reliability and consistency, meeting the needs of professional electronics developers and manufacturers.

For engineers and professionals seeking reliable bipolar transistor components, the onsemi KSA916YTA provides a balance of current handling, voltage rating, and compact packaging. EnvMart offers comprehensive listings of Bipolar Transistors including this model for enhanced technical sourcing and seamless procurement.

onsemi Small Signal PNP Transistor 800 mA 120 V 3-Pin TO-92 KSA916YTA
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Frequently Asked Questions

The maximum collector current for this transistor is 800 mA.

The maximum collector-emitter voltage (Vceo) rating is 120 V.

It has a maximum power dissipation of 900 mW.

The maximum transition frequency for this transistor is 1 MHz, suitable for moderate switching applications.

This model has a height of 21.2 mm, length of 5.1 mm, and width of 4.1 mm.

The minimum DC current gain (hFE) is 60, ensuring reliable amplification.

This transistor is designed for through-hole mounting, facilitating easy integration into PCB designs.

The maximum operating temperature can reach up to 150 degrees Celsius.

It features a single transistor configuration.

This model has a PNP polarity, suitable for specific circuit designs.

The maximum emitter-base voltage (VEBO) is -5 V.

This transistor is suitable for small signal amplification and switching in industrial and laboratory electronics.

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