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onsemi PNP Bipolar Transistor 200 mA Collector Current, 40 V Collector Emitter Voltage, TO-92 Package 2N3906TFR

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 18.03mm
Length 5.2mm
Model 2N3906TFR
Width 4.19mm
Mount Type Through Hole
Series 2N3906
Maximum Operating Temperature 150°C
Package Type TO-92
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo -40V
Minimum DC Current Gain hFE 100
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -5V
Maximum Collector Base Voltage VCBO -40V
Maximum Power Dissipation Pd 625mW
Maximum DC Collector Current Idc -200mA
Transistor Configuration Single
Maximum Transition Frequency ft 250MHz
onsemi 2N3906TAR PNP Transistor, 200 mA, 40 V, 3-Pin TO-92Brand ON Semiconductor

Key Features

  • This transistor supports a maximum power dissipation of 625 mW suitable for small signal amplification.
  • The pin count is 3, designed for through-hole mounting in TO-92 packaging.
  • Maximum transition frequency is 250 MHz, enabling high-speed operation.
  • Operating temperature range spans from -55°C to 150°C ensuring durability in harsh environments.
  • Configured as a single transistor with PNP polarity for various circuit configurations.
  • The minimum DC current gain (hFE) is 100 enhancing signal amplification.
  • Collector base voltage is rated at -40 V and emitter base voltage at -5 V.
  • Physical dimensions include a length of 5.2 mm, width of 4.19 mm, and height of 18.03 mm.

Product Description

onsemi 2N3906TFR is a small signal PNP Bipolar Junction Transistor (BJT) housed in a TO-92 package, designed for use in various electronic circuits requiring moderate current and voltage handling. This transistor features a maximum DC collector current of 200 mA and a maximum collector emitter voltage of 40 V, making it suitable for switching and amplification tasks in industrial, electronic, and instrumentation applications.

The device's power dissipation rating is 625 mW, allowing it to efficiently operate with adequate thermal management. It provides a minimum DC current gain (hFE) of 100 and operates up to a transition frequency of 250 MHz, supporting high-frequency circuit designs. The transistor is built with three leads for through-hole mounting, facilitating easy integration into printed circuit boards.

Operating temperature can range from -55°C to 150°C, demonstrating resilience in demanding environments such as industrial machinery controls, automotive electronics, and consumer electronic devices. The compact TO-92 package has physical dimensions approximately 18.03 mm in height, 5.2 mm in length, and 4.19 mm in width, contributing to its widespread usage in space-constrained applications.

This 2N3906TFR transistor is a reliable component for signal switching and amplification in circuits requiring PNP transistor characteristics. It is compliant with standard semiconductor industry parameters, though no specific certifications are required.

This transistor provides effective switching and amplification for low power applications. The compact TO-92 package supports through-hole mounting and ease of assembly. Supports extended operating temperatures suitable for automotive and industrial applications.

High transition frequency allows use in moderate-frequency circuits. Robust electrical ratings ensure durability and reliability in varied environments.

Ideal for use in industrial electronics, consumer devices, laboratory instrumentation, and automotive circuits. Browse more Bipolar Transistors and discrete semiconductor components on EnvMart for comprehensive industrial and electronic solutions.

onsemi PNP Bipolar Transistor 200 mA Collector Current, 40 V Collector Emitter Voltage, TO-92 Package 2N3906TFR
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Frequently Asked Questions

The maximum DC collector current for the 2N3906TFR is 200 mA.

This model has a maximum collector-emitter voltage rating of 40 V.

The maximum power dissipation for this transistor is 625 mW.

The maximum transition frequency of the 2N3906TFR is 250 MHz, enabling high-speed operation.

The physical dimensions of the TO-92 package are approximately 18.03 mm in height, 5.2 mm in length, and 4.19 mm in width.

The operating temperature range for the 2N3906TFR spans from -55°C to 150°C.

This model features a pin count of 3, designed for through-hole mounting.

The minimum DC current gain (hFE) for the 2N3906TFR is 100, enhancing its signal amplification capabilities.

This transistor is configured as a single PNP transistor, suitable for various circuit configurations.

The maximum emitter-base voltage (VEBO) for the 2N3906TFR is -5 V.

The 2N3906TFR is suitable for use in industrial electronics, consumer devices, laboratory instrumentation, and automotive circuits.

The country of origin for this model is India.

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