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onsemi NPN Darlington Transistor 1A Continuous Collector Current 80V Collector Emitter Voltage 125W Power BSP52T3G
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.75mm |
| Length | 6.7mm |
| Model | BSP52T3G |
| Mount Type | Surface |
| Series | BSP52T1 |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-223 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 4 |
| Maximum Continuous Collector Current Ic | 1A |
| Maximum Collector Emitter Voltage Vceo | 80V |
| Number of Elements per Chip | 1 |
| Minimum DC Current Gain hFE | 2000 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.3V |
| Maximum Collector Base Voltage VCBO | 90V |
| Maximum Collector Cut-off Current | 10μA |
| Automotive Standard | AEC-Q101 |
| Maximum Power Dissipation Pd | 125W |
| onsemi BSP52T3G 1 Darlington Transistor NPN, 1 A 80 V HFE | 2000, 4-Pin SOT-223 |
Key Features
- The transistor is designed with NPN Darlington configuration for high gain applications.
- It features a high minimum DC current gain (hFE) of 2000 for amplified signal performance.
- Maximum power dissipation rating is 125W for robust operation.
- Maximum collector emitter saturation voltage is 1.3V ensuring low voltage drop.
- Operates reliably between -65°C to 150°C operating temperature range.
- The package type SOT-223 supports surface mount technology (SMT) mounting.
- Maximum voltage ratings include 80V collector emitter, 90V collector base, and 5V emitter base voltages.
- Pin count of 4 and a length of 6.7mm with height of 1.75mm make compact integration possible.
Product Description
onsemi BSP52T3G is a high-performance NPN Darlington transistor designed for applications requiring high current gain and power dissipation. Featuring a maximum continuous collector current of 1 ampere and collector emitter voltage rating of 80 volts, this transistor is capable of reliable operation in demanding electronic circuits.
The device comes in a compact SOT-223 4-pin package suitable for surface mount assembly, measuring 6.7mm in length and 1.75mm in height, allowing for space-efficient PCB layout.
With a minimum DC current gain of 2000, the BSP52T3G provides significant amplification, making it suitable for switching and amplification applications in power management and automotive domains. Its maximum power dissipation rating of 125 watts ensures it can handle high load conditions without degradation.
Electrical characteristics include collector emitter saturation voltage of 1.3V, collector base voltage maximum of 90V, and emitter base voltage maximum of 5V. The operating temperature range spans from -65 degrees Celsius to 150 degrees Celsius, supporting a wide range of industrial and automotive environments.
This transistor complies with the AEC-Q101 automotive standard, certifying its robustness and suitability for automotive electronics. The transistor is designed with NPN Darlington configuration for high gain applications.
It features a high minimum DC current gain (hFE) of 2000 for amplified signal performance. Maximum power dissipation rating is 125W for robust operation. Maximum collector emitter saturation voltage is 1.3V ensuring low voltage drop.
Operates reliably between -65°C to 150°C operating temperature range. The package type SOT-223 supports surface mount technology (SMT) mounting. Maximum voltage ratings include 80V collector emitter, 90V collector base, and 5V emitter base voltages.
Pin count of 4 and a length of 6.7mm with height of 1.75mm make compact integration possible. Certified as automotive standard AEC-Q101 ensuring quality and reliability for automotive applications.
This product is ideal for use in industrial control, power switching, automotive electronics, and other demanding engineering applications requiring reliable high gain transistors.
Explore more NPN Darlington Transistors and related semiconductor components in EnvMart’s Electronics & Electricals catalogue.
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Frequently Asked Questions
The maximum continuous collector current for this model is 1 ampere.
The collector emitter voltage rating is 80 volts.
It has a minimum DC current gain (hFE) of 2000, providing significant amplification.
The maximum power dissipation rating is 125 watts.
The maximum collector base voltage is 90 volts, and the maximum emitter base voltage is 5 volts.
It operates reliably between -65°C and 150°C.
This model comes in a SOT-223 package type, suitable for surface mount technology.
The transistor measures 6.7mm in length and 1.75mm in height.
The maximum collector emitter saturation voltage is 1.3 volts.
It has a pin count of 4.
Yes, it complies with the AEC-Q101 automotive standard, ensuring its suitability for automotive applications.
The transistor polarity of this model is NPN.
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