onsemi Transistor, NPN 100 mA, 65 V, Surface Mount SOT-723 Package BC846BM3T5G

onsemi BC846BM3T5G Bipolar NPN Transistor is designed for general purpose semiconductor applications with a maximum collector current of 100 mA and maximum collector-emitter voltage of 65 V. Packaged in a low-profile 3-pin SOT-723 surface mount package, it enables compact and efficient electronic circuit designs.

This transistor features a high minimum DC current gain of 200 and operates efficiently up to a transition frequency of 100 MHz, making it suitable for amplification and switching uses in industrial, electronic components manufacturing, and consumer electronics.

It operates reliably over a wide temperature range from -55°C to 150°C. The device is optimized for low power dissipation of 265 mW and designed as a single transistor configuration for discrete semiconductor applications.

Its electrical characteristics include a maximum collector-base voltage of 80 V and an emitter-base voltage of 6 V, contributing to its durability and performance stability in various circuit environments.

The compact physical dimensions of 1.25 mm length, 0.85 mm width, and 0.55 mm height support use in space-constrained and miniaturized electronic assemblies. Maximum DC collector current of 100 mA permits reliable signal amplification.

Maximum collector-emitter voltage of 65 V supports moderate voltage circuits. Surface mount SOT-723 package facilitates compact PCB layouts. Transition frequency of 100 MHz allows high-speed switching applications. Operating temperature range from -55°C to 150°C adapts to varying environmental conditions.

Minimum current gain of 200 ensures effective transistor action. Single transistor configuration for discrete component usage. Compact size ideal for industrial, electronic, laboratory, and consumer device applications. Designed with no automotive qualification for general electronic use cases.

This onsemi BC846BM3T5G transistor is an ideal component for industrial electronics, laboratory instrumentation, electronic device manufacturing, and other applications requiring reliable, low-power, high-frequency NPN transistors.

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