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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 0.9mm |
| Length | 2.9mm |
| Model | CPH5524-TL-E |
| Width | 1.6mm |
| Mount Type | Surface |
| Series | CPH5524 |
| Maximum Operating Temperature | 150°C |
| Package Type | CPH |
| Minimum Operating Temperature | -55°C |
| Pin Count | 5 |
| Maximum Collector Emitter Voltage Vceo | 50V |
| Minimum DC Current Gain hFE | 200 |
| Transistor Polarity | NPN + PNP |
| Maximum Emitter Base Voltage VEBO | 6V |
| Maximum Collector Base Voltage VCBO | 100V |
| Maximum Power Dissipation Pd | 1.2W |
| Maximum DC Collector Current Idc | 3A |
| Transistor Configuration | Common Emitter |
| Maximum Transition Frequency ft | 390MHz |
onsemi CPH5524-TL-E transistor is a high-performance dual bipolar transistor combining an NPN and a PNP device in a single compact surface mount package. Rated for a maximum DC collector current of 3 A and collector-emitter voltage of 50 V, this device is suitable for use in a broad range of electronic circuits requiring dual complementary transistors.
The transistor package type is CPH with a total of 5 pins and is configured as a common emitter transistor. It supports a maximum power dissipation of 1.2 W with a minimum DC current gain (hFE) of 200, ensuring dependable amplification characteristics. The dual transistor arrangement reduces component count and board space, optimizing design for industrial, consumer electronics, and power management applications.
This transistor operates effectively across a wide temperature range from -55°C to 150°C, making it suitable for demanding environments. Its maximum transition frequency of 390 MHz supports high-speed switching operations, ideal for modern electronic devices and control systems.
The compact dimensions of 2.9 mm length, 1.6 mm width, and 0.9 mm height make it practical for surface mount technology (SMT) assembly on printed circuit boards where size and reliability are critical. The transistor polarity is NPN + PNP, offering versatility in complementary circuit configurations.
Dual NPN and PNP transistors integrated in one package. Max collector current of 3 A supports high load requirements. Max collector-emitter voltage of 50 V suitable for medium power devices. Common emitter configuration for easy amplifier design.
High transition frequency of 390 MHz for fast switching. Wide operating temperature range from -55°C to 150°C for reliability. Compact 5-pin surface mount CPH package. Power dissipation rating of 1.2 W for thermal stability.
High gain with minimum hFE of 200 ensures effective amplification.
This transistor is commonly used in electronic components, power management circuits, discrete semiconductor applications in industrial, consumer electronics, automotive, and manufacturing sectors. Its surface mount design facilitates automated assembly processes, improving production efficiency. It combines robust electrical characteristics with compact packaging, enabling designers to optimize circuit performance and board real estate.
Explore further bipolar transistor products and complementary semiconductor devices in EnvMart to find components optimized for your specific application requirements.
Explore more products in our Bipolar Transistors category.
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