Nexperia N-Channel MOSFET, 76 A, 30 V Enhancement Mode, 4-Pin SOT-669 PSMN7R0-30YL,115

Nexperia PSMN7R0-30YL,115 is a robust N-Channel MOSFET transistor engineered for power management applications requiring high continuous drain current of 76 A and a maximum drain-source voltage of 30 V. It is housed in a compact 4-pin SOT-669 surface-mount package that supports efficient heat dissipation with a maximum power dissipation rating of 51 W.

The device operates in enhancement mode, providing low on-resistance of 7 mΩ for higher efficiency and reduced conduction losses, critical for industrial, automotive electronics, and power supply designs.

The typical gate charge of 22 nC facilitates rapid switching, making this MOSFET suitable for high-frequency switching applications such as converters and motor drives.

Its operating temperature range from -55°C up to 175°C ensures durability in both low and high temperature environments, enabling its use in demanding industrial and automotive sectors.

The physical dimensions of the SOT-669 package are 5 mm in length, 4.1 mm in width, and 1.1 mm in height, allowing for space-efficient PCB layout designs. Additional features include a gate-source voltage tolerance up to ±20 V and surface mount compatibility, making it ideal for modern automated manufacturing processes.

The MOSFET provides excellent performance in power electronic circuits, including power supplies, motor control, and switching regulators. Its robust thermal and electrical specifications ensure long-term reliability in harsh environments typically found in industrial and automotive applications.

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