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Nexperia N-Channel MOSFET, 100 A Maximum Continuous Drain Current, 80 V Drain Source Voltage, TO-220 PSMN4R4-80PS,127
Specifications
| Country of Origin | Philippines |
|---|---|
| Brand | Nexperia |
| Height | 16mm |
| Length | 10.3mm |
| Model | PSMN4R4-80PS,127 |
| Width | 4.7mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 100A |
| Maximum Drain Source Voltage Vds | 80V |
| Maximum Drain Source Resistance Rds | 4.1mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 306W |
| Typical Gate Charge Qg @ Vgs | 125nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Features enhancement mode channel operation for efficient switching.
- Supports a maximum power dissipation of 306 W for robust thermal handling.
- Through hole mount type facilitates durable PCB installation.
- Offers a low maximum drain source resistance of 4.1 mΩ for reduced conduction losses.
- Operates reliably from -55°C up to 175°C, suitable for demanding environments.
- Typical gate charge at 125 nC ensures fast switching performance.
- Maximum gate source voltage ranges from -20 V to +20 V for flexible drive conditions.
- Compact dimensions with 10.3 mm length, 4.7 mm width, and 16 mm height enhance integration capability.
Product Description
Nexperia PSMN4R4-80PS,127 is an industrial-grade N-Channel MOSFET designed for high-power and efficient switching applications. It supports a maximum continuous drain current of 100 A and a maximum drain source voltage of 80 V, making it ideal for power management in electronic circuits and semiconductor projects.
The device features an enhancement mode channel with a TO-220 package and a through-hole mount type, providing strong mechanical stability for PCB integration. Its robust power dissipation rating of 306 W ensures excellent thermal management, suitable for commercial and industrial electronics.
This MOSFET delivers a low maximum drain source resistance of 4.1 mΩ which contributes to lower conduction losses and improved energy efficiency. Operating temperatures ranging from -55°C to 175°C guarantee reliability under harsh thermal conditions, making it suitable for automotive, power conversion, and industrial control systems.
The typical gate charge of 125 nC enables fast switching and reduced switching losses, while a maximum gate source voltage of -20 V to +20 V offers flexible drive voltage options. With compact form factor dimensions of 10.3 mm length, 4.7 mm width, and 16 mm height, this MOSFET integrates easily into space-constrained designs.
Manufactured in the Philippines, this product upholds quality manufacturing standards and is designed to meet rigorous electronic component requirements. Enhancement mode N-Channel MOSFET. Maximum continuous drain current: 100 A.
Maximum drain source voltage: 80 V. TO-220 package with 3 pins and through-hole mount. Maximum power dissipation of 306 W. Low on-resistance of 4.1 mΩ for efficient conduction. Operating temperature range: -55°C to 175°C.
Typical gate charge: 125 nC. Maximum gate source voltage: -20 V to +20 V. Compact dimensions for versatile applications.
This Nexperia MOSFET is suited for use in industrial electronics, power supply design, automotive electronics, manufacturing automation, and other applications requiring efficient power switching components.
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Frequently Asked Questions
The maximum continuous drain current of this model is 100 A.
It supports a maximum drain source voltage of 80 V.
This MOSFET is packaged in a TO-220 format with a through-hole mount type.
It has a maximum power dissipation rating of 306 W, ensuring robust thermal handling.
The operating temperature range is from -55°C to 175°C.
The typical gate charge is 125 nC, which facilitates fast switching performance.
The maximum gate source voltage ranges from -20 V to +20 V.
The dimensions are 10.3 mm in length, 4.7 mm in width, and 16 mm in height.
It features a low maximum drain source resistance of 4.1 mΩ, contributing to reduced conduction losses.
This model is suitable for industrial electronics, power supply design, automotive electronics, and manufacturing automation.
The TO-220 package has 3 pins.
It utilizes an N-channel type, designed for enhancement mode operation.
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