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Nexperia N-Channel MOSFET 37 A 30 V Enhancement Mode 4-Pin SOT-669 PSMN011-30YLC,115
Specifications
| Country of Origin | Philippines |
|---|---|
| Brand | Nexperia |
| Height | 1.1mm |
| Length | 5mm |
| Model | PSMN011-30YLC,115 |
| Width | 4.1mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 175°C |
| Package Type | SOT-669 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 37A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 14.5mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 29W |
| Typical Gate Charge Qg @ Vgs | 10.3nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
Key Features
- Designed with enhancement mode channel for high efficiency.
- Maximum power dissipation rated at 29 W for robust operation.
- Low maximum drain-source resistance of 14.5 mΩ reduces conduction losses.
- Operates reliably within -55°C to 175°C temperature range.
- Typical gate charge is 10.3 nC at 10 V gate voltage to ensure fast switching.
- Surface mount package enables efficient PCB assembly.
- Pin count of 4 facilitates integration in compact circuits.
- Maximum gate-source voltage rating of ±20 V for safe handling of control signals.
Product Description
Nexperia PSMN011-30YLC,115 is a high-performance N-Channel MOSFET designed for demanding electronic applications requiring efficient switching and power control at 30 V and 37 A continuous current.
Featuring a low drain-source on-resistance of 14.5 mΩ and a maximum power dissipation of 29 W, this device is suitable for power management and amplification tasks in industrial, automotive, telecommunications, and consumer electronics.
The device is housed in a compact 4-pin SOT-669 surface mount package with precise dimensions (5 mm length, 4.1 mm width, and 1.1 mm height), supporting high-density PCB layouts and automation.
Its enhancement mode channel type and typical gate charge of 10.3 nC at Vgs = 10 V promote fast switching speeds, enhancing efficiency in PWM and motor control circuits. The MOSFET operates reliably across a wide temperature range from -55°C to 175°C, ensuring durability in harsh environments.
Designed with enhancement mode channel for high efficiency. Maximum power dissipation rated at 29 W for robust operation. Low maximum drain-source resistance of 14.5 mΩ reduces conduction losses. Operates reliably within -55°C to 175°C temperature range.
Typical gate charge is 10.3 nC at 10 V gate voltage to ensure fast switching. Surface mount package enables efficient PCB assembly. Pin count of 4 facilitates integration in compact circuits. Maximum gate-source voltage rating of ±20 V for safe handling of control signals.
Compact dimensions for space-saving design. Manufactured in Philippines ensuring standardized quality.
This Nexperia MOSFET is optimized for electronic component manufacturing, power management solutions, and integration in various industrial control systems. It supports designs in consumer electronics, telecommunications infrastructure, and automotive electronics where durability and efficient power handling are critical.
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Frequently Asked Questions
The maximum continuous drain current of the PSMN011-30YLC,115 is 37 A.
This model has a maximum drain-source voltage of 30 V.
The typical gate charge at a gate voltage of 10 V is 10.3 nC.
The maximum power dissipation rated for this MOSFET is 29 W.
The dimensions of the SOT-669 package are 5 mm in length, 4.1 mm in width, and 1.1 mm in height.
The maximum gate-source voltage rating is ±20 V.
It operates reliably within a temperature range of -55°C to 175°C.
This MOSFET features an enhancement mode N-channel.
The maximum drain-source resistance is 14.5 mΩ.
The mount type of the PSMN011-30YLC,115 is surface mount.
This MOSFET is manufactured in the Philippines.
This model is suitable for power management and amplification tasks in industrial, automotive, telecommunications, and consumer electronics applications.
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