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Nexperia N-Channel MOSFET, 9 A, 30 V Surface-Mount, 8-Pin DFN Package PMPB11EN,115

Category MOSFETs Brand Nexperia Condition New

Specifications

Country of Origin China
Brand Nexperia
Height 0.65mm
Length 2.1mm
Model PMPB11EN,115
Width 2.1mm
Mount Type Surface
Series PMPB11EN
Maximum Operating Temperature 150°C
Package Type DFN
Minimum Operating Temperature -55°C
Pin Count 8
Channel Type N
Maximum Continuous Drain Current Id 9A
Maximum Drain Source Voltage Vds 30V
Maximum Drain Source Resistance Rds 14.5mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 12.5W
Typical Gate Charge Qg @ Vgs 13.7nC
Maximum Gate Source Voltage Vgs -20, +20V

Key Features

  • This MOSFET uses an 8-pin DFN surface-mount package for compact PCB integration.
  • Features an enhancement mode channel suitable for low resistance switching.
  • Maximum drain-source resistance is 14.5 milliohms ensuring low conduction losses.
  • Capable of dissipating up to 12.5 W power with high reliability.
  • Operates across a temperature range from -55°C to 150°C for demanding industrial environments.
  • Maximum gate-source voltage tolerance of -20 V to +20 V enables robust control.
  • Typical gate charge is 13.7 nanocoulombs allowing fast switching speeds.
  • Compact dimensions of 2.1 mm by 2.1 mm by 0.65 mm enable dense circuit design.

Product Description

Nexperia PMPB11EN,115 is an N-Channel Enhancement Mode MOSFET designed for efficient power management in electronic circuits. This device supports a maximum continuous drain current of 9 amperes and can withstand up to 30 volts between the drain and source pins.

Housed in a compact 8-pin DFN surface-mount package, it enables space-saving PCB layouts suitable for modern electronics manufacturing. With a low maximum drain-source resistance of 14.5 milliohms, the device minimizes conduction losses, improving overall circuit efficiency.

The MOSFET has a maximum power dissipation rating of 12.5 watts, permitting reliable operation in power switching applications including power supplies, motor control, and amplification circuits.

This MOSFET uses an 8-pin DFN surface-mount package for compact PCB integration. Features an enhancement mode channel suitable for low resistance switching. Maximum drain-source resistance is 14.5 milliohms ensuring low conduction losses.

Capable of dissipating up to 12.5 W power with high reliability. Operates across a temperature range from -55°C to 150°C for demanding industrial environments. Maximum gate-source voltage tolerance of -20 V to +20 V enables robust control.

Typical gate charge is 13.7 nanocoulombs allowing fast switching speeds. Compact dimensions of 2.1 mm by 2.1 mm by 0.65 mm enable dense circuit design. This MOSFET is ideal for use in various industrial and commercial electronic applications such as power converters, motor drivers, and circuit protection circuits.

Manufactured in China under the Nexperia brand, the PMPB11EN,115 model is a reliable component supporting modern electronic product designs. Explore more semiconductor solutions and power management devices at EnvMart for your industrial and electronic component needs.

Explore more products in our MOSFETs category.

Nexperia N-Channel MOSFET, 9 A, 30 V Surface-Mount, 8-Pin DFN Package PMPB11EN,115
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Frequently Asked Questions

The maximum continuous drain current for this model is 9 amperes.

It can withstand a maximum drain-source voltage of 30 volts.

This MOSFET has a maximum power dissipation rating of 12.5 watts.

The maximum drain-source resistance is 14.5 milliohms, which helps minimize conduction losses.

The dimensions are 2.1 mm in length, 2.1 mm in width, and 0.65 mm in height.

It operates across a temperature range from -55°C to 150°C.

The typical gate charge is 13.7 nanocoulombs, allowing for fast switching speeds.

It uses an 8-pin DFN surface-mount package for compact PCB integration.

The maximum gate-source voltage tolerance is -20 V to +20 V.

This MOSFET is suitable for applications such as power supplies, motor control, and amplification circuits.

It features an enhancement mode channel suitable for low resistance switching.

It is manufactured in China under the Nexperia brand.

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