Nexperia Type P-Channel MOSFET 4 A 20 V Enhancement Mode 3-Pin SOT-23 PMV32UP

Nexperia PMV32UP Type P-Channel MOSFET is a high-performance discrete semiconductor device designed for power switching applications in electronics and electrical systems. It features a 3-pin SOT-23 surface-mount package with a compact form factor measuring 3 mm in length, 1.4 mm in width, and 1 mm in height, suitable for modern PCB designs.

This MOSFET operates in enhancement mode with a maximum continuous drain current rating of 4 amperes and a maximum drain-source voltage of 20 volts, making it ideal for low voltage power switching applications. The device supports a maximum power dissipation of 415 milliwatts and withstands operating temperatures from -55°C up to 150°C, providing robust reliability under harsh environmental conditions.

The maximum drain-source resistance (Rds) is 36 milliohms, which ensures low conduction losses and improved efficiency. The typical gate charge (Qg) at Vgs is 15.5 nanocoulombs, facilitating swift switching with minimal gate drive power. The MOSFET tolerates gate-source voltages ranging from -8 V to +8 V, enabling compatibility with various drive circuits.

Applications of Nexperia PMV32UP include power management, DC-DC converters, load switching, and other electronic circuits requiring efficient and compact power control devices. Its surface-mount design supports automated assembly and high-density circuit board integration.

This product is manufactured in China and is compliant with standard industry quality norms. It is supplied new, ensuring the highest standards for industrial, laboratory, electronics manufacturing, and commercial use cases.

Compact 3-pin SOT-23 package for space-efficient PCB mounting. Type P enhancement mode channel for reliable power switching. Supports continuous drain current up to 4 amperes for medium power applications. Low on-resistance of 36 mΩ reduces power loss and heat generation.

Wide operating temperature range from -55°C to 150°C for varied environments. Maximum gate-source voltage rating of ±8 V for flexible drive circuit compatibility. Typical gate charge of 15.5 nC enables rapid switching performance.

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