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Taiwan Semiconductor Diode Schottky 40 V 200 mA Surface Mount 3-Pin SOT-23 BAS40-05 RF

Category Diode Brand Taiwan Semiconductor Condition New

Specifications

Country of Origin Taiwan
Brand Taiwan Semiconductor
Height 1.2mm
Length 3mm
Model BAS40-05 RF
Width 1.4mm
Mount Type Surface
Series BAS40
Maximum Operating Temperature 125°C
Package Type SOT-23
Minimum Operating Temperature -65°C
Pin Count 3
Maximum Continuous Forward Current If 200mA
Peak Reverse Repetitive Voltage Vrrm 40V
Diode Configuration Common Cathode
Rectifier Type Schottky
Peak Reverse Current Ir 200nA
Peak Non-Repetitive Forward Surge Current Ifsm 600mA
Maximum Forward Voltage Vf 1V
Peak Reverse Recovery Time trr 5ns
Vishay 40V 200mA, Dual Schottky Diode, 3-Pin SOT-23 BAS40-05-V-GS08Brand Vishay

Key Features

  • Designed with common cathode diode configuration.
  • Features a maximum continuous forward current of 200 mA.
  • Supports peak reverse repetitive voltage of 40 V for reliable operation.
  • Low forward voltage drop of up to 1 V ensures energy efficiency.
  • Compact dimensions of 3 mm length, 1.4 mm width, and 1.2 mm height enable space-saving PCB layouts.
  • Wide operating temperature range from -65°C to 125°C suits harsh environments.
  • Peak non-repetitive forward surge current is 600 mA for transient tolerance.
  • Extremely fast recovery time of 5 ns optimizes switching performance.

Product Description

The Taiwan Semiconductor BAS40-05 RF is a Schottky diode designed for use in low power and high current electronic circuits. This surface-mounted diode features a common cathode configuration and comes in a compact 3-Pin SOT-23 package, facilitating easy integration into printed circuit boards with space constraints.

With a maximum continuous forward current of 200 mA and a peak reverse repetitive voltage of 40 V, it offers reliable performance in diverse electronic applications, including power management, signal rectification, and voltage clamping.

The diode has a low forward voltage drop of 1 V, which reduces power loss and improves energy efficiency. Its peak non-repetitive forward surge current rating of 600 mA enables it to withstand transient current spikes without damage.

Precision manufacturing results in a fast peak reverse recovery time of 5 ns, allowing the diode to switch rapidly, making it well-suited for high-frequency circuits. The diode also performs reliably over a wide temperature range from -65°C up to 125°C, suitable for industrial, automotive, and consumer electronics.

Dimensions measuring 3 mm by 1.4 mm with a height of 1.2 mm make this diode a compact and efficient component for modern electronic designs. Common cathode diode configuration for efficient circuit design. Maximum continuous forward current of 200 mA supports moderate power loads.

Peak reverse repetitive voltage of 40 V ensures robust protection. Low forward voltage drop cuts energy loss in power circuits. Compact 3-Pin SOT-23 package facilitates automated PCB assembly. Operating temperature range -65°C to 125°C is ideal for industrial environments.

Surge current rating of 600 mA protects against transient conditions. Fast peak reverse recovery time of 5 ns optimizes switching applications. High quality produced in Taiwan, Province Of China, with strict semiconductor standards.

This Schottky diode is especially valuable in power management, electronic rectification, and voltage clamping in industrial, manufacturing equipment, automotive electronics, and consumer devices. Its small form factor and efficient performance make it a reliable choice for designers requiring dependable and compact diode solutions.

EnvMart offers this Taiwan Semiconductor BAS40-05 RF Diode as part of its extensive electronic component range, facilitating seamless sourcing for engineers and manufacturers.

Taiwan Semiconductor Diode Schottky 40 V 200 mA Surface Mount 3-Pin SOT-23 BAS40-05 RF
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Frequently Asked Questions

The maximum continuous forward current of the BAS40-05 RF is 200 mA.

This model supports a peak reverse repetitive voltage of 40 V.

It has compact dimensions of 3 mm in length, 1.4 mm in width, and 1.2 mm in height.

The BAS40-05 RF features a common cathode diode configuration.

The diode operates within a temperature range of -65°C to 125°C.

It has a peak non-repetitive forward surge current rating of 600 mA.

The maximum forward voltage drop is up to 1 V, which contributes to energy efficiency.

The BAS40-05 RF features a fast peak reverse recovery time of 5 ns.

It comes in a 3-Pin SOT-23 surface mount package, suitable for compact PCB layouts.

The peak reverse current for this model is rated at 200 nA.

This Schottky diode is commonly used in power management, signal rectification, and voltage clamping applications.

It is manufactured in Taiwan, Province Of China, adhering to strict semiconductor standards.

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