onsemi Schottky Diode 40 V 250 mA Surface Mount SOD-523 Package 2-Pin NSR0340V2T1G

onsemi NSR0340V2T1G Schottky Diode is a high-performance semiconductor diode designed for low voltage, high-frequency applications. Manufactured with the Schottky barrier principle, it delivers excellent forward voltage drop and low reverse current, making it ideal for power rectification, freewheeling, and polarity protection in compact, surface-mounted designs.

This diode comes in a 2-pin SOD-523 package measuring 1.3 mm length, 0.9 mm width, and 0.7 mm height, making it suitable for space-constrained circuit boards. It supports a maximum continuous forward current of 250 mA and peak reverse repetitive voltage of 40 V, ensuring robust performance under demanding electrical conditions.

The device features a maximum forward voltage drop of 510 mV and fast peak reverse recovery time of 5 ns, supporting efficient switching in power management circuits. Operating temperature ranges from -55°C to a maximum of 150°C, allowing reliable use in harsh industrial, electronic component, manufacturing, and HVAC control systems.

Additional technical features include a peak forward surge current of 1 A and peak reverse current of 6 μA, enabling the diode to withstand transient electrical spikes. The package is epoxy moulded for protection and lightweight construction (~11.7 mg), optimized for automated PCB assembly lines.

This onsemi Schottky diode is widely used in industrial, laboratory, construction, and commercial electronics applications where size, efficiency, and performance are critical. It complies with modern environmental and electrical standards, ensuring dependable operation in various semiconductor and electronic assemblies.

Features a 40 V peak reverse repetitive voltage rating. Supports maximum continuous forward current of 250 mA for reliable operation. Packaged in a compact 2-pin SOD-523 surface mount package. Offers low forward voltage drop of 510 mV to improve efficiency.

Operates within a temperature range from -55°C to 150°C for versatility. Designed with a Schottky barrier to optimize forward voltage and reverse current characteristics. Peak forward surge current up to 1 A enhances transient handling capability.

Extremely fast peak reverse recovery time of 5 ns ideal for high-speed switching. Lightweight and epoxy moulded case suitable for automated assembly processes. Manufactured in China following industry standards. Explore more high-quality semiconductor components and Schottky Diodes at EnvMart for your industrial and electronic design needs.