Nexperia N-Channel MOSFET 150 mA 100 V Enhancement 3-Pin SOT-23 BSS123,215

The Nexperia BSS123,215 is a highly reliable N-Channel MOSFET designed for switching and amplification in electronic applications. It features a maximum continuous drain current of 150 mA and a maximum drain-source voltage rating of 100 V, making it suitable for a variety of low power electronic devices.

Its compact SOT-23 package with 3 pins allows integration into surface-mount PCB designs, saving space and ensuring ease of assembly in automated production.

This enhancement mode transistor operates reliably within a temperature range of -55°C to 150°C, ideal for industrial, commercial, and consumer electronics exposed to temperature variations.

The device's low typical gate charge of 13.5 nC at gate-source voltage ensures efficient switching performance, contributing to reduced power losses and improved system efficiency.

With a maximum drain-source resistance of 6 Ω and a forward voltage drop of approximately 1 V, the BSS123,215 offers low conduction losses, enhancing overall device performance. The gate-source voltage tolerance ranging from -20 V to +20 V provides safe operating margins for electronic circuit designers.

This MOSFET is commonly used in power management, signal switching, amplification, and other semiconductor applications in electronics engineering. Packaged in SOT-23 format, it is widely compatible with PCB layouts requiring compact and efficient discrete components.

Its performance specifications ensure reliable operation in industrial automation, consumer electronics, and automotive circuits not requiring automotive certification. Explore more MOSFET offerings and semiconductor components on EnvMart for your industrial and electronic design needs.