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Nexperia N-Channel MOSFET 320 mA 60 V Enhancement 3-Pin SC-70 BSS138BKW,115

Category MOSFET Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Height 1mm
Length 3mm
Model BSS138BKW,115
Width 1.4mm
Mount Type Surface
Series BSS138BKW
Maximum Operating Temperature 150°C
Package Type SC-70
Minimum Operating Temperature -55°C
Pin Count 3
Automotive Standard AEC-Q101
Channel Type N
Maximum Continuous Drain Current Id 320mA
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 1.6Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 310mW
Typical Gate Charge Qg @ Vgs 0.6nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.1V
Nexperia N-Channel MOSFET, 300 mA, 55 V, 3-Pin SOT-323 BSH121,135Brand Nexperia

Key Features

  • Maximum continuous drain current of 320 mA ensures efficient current handling.
  • Operates with a maximum drain-source voltage of 60 V for medium voltage applications.
  • Low typical forward voltage of 1.1 V reduces power losses.
  • Surface mount design supports flexible PCB mounting options.
  • Wide operating temperature range from -55°C to 150°C for robust performance.
  • Maximum power dissipation rating of 310 mW for efficient heat management.
  • Fast switching with typical gate charge of 0.6 nC at Vgs enhances signal response.
  • Compliant with automotive standard AEC-Q101 ensuring reliability in automotive uses.

Product Description

Nexperia BSS138BKW,115 N-Channel MOSFET is a high-quality enhancement mode transistor designed for switching and amplification in electronic circuits. This component is housed in a compact 3-pin SC-70 package suitable for surface mounting on printed circuit boards.

With a maximum continuous drain current of 320 mA and a maximum drain-source voltage of 60 V, it is well suited for low to medium power applications in automotive, consumer electronics, and industrial equipment. The forward voltage of 1.1 V and maximum power dissipation of 310 mW contribute to efficient operation with minimal power loss.

This MOSFET supports a wide operating temperature range from -55°C to 150°C, making it reliable under harsh environmental conditions. The maximum gate-source voltage rating is -20 V to +20 V, allowing for versatile drive voltages.

The typical gate charge of 0.6 nC ensures fast gate switching, beneficial for high-frequency applications. The component meets the stringent automotive standard AEC-Q101, indicating robustness for automotive and other demanding uses.

The device dimensions are 3 mm in length, 1.4 mm in width, and 1 mm in height, minimizing PCB real estate usage. Its surface mount configuration facilitates automated manufacturing processes.

This MOSFET is primarily used in switching, load driving, and signal amplification within industrial, automotive, and electronic manufacturing sectors. Efficient 320 mA continuous drain current for diverse circuit applications.

Compact 3-pin SC-70 package for space-saving PCB assembly. Wide operational temperature range for durable performance. Meets automotive quality standards (AEC-Q101). Low typical forward voltage reduces power losses. Supports high frequency switching with low gate charge.

Surface mount package enables automated assembly. Rated for 60 V maximum drain-source voltage. Reliable under demanding industrial and automotive environments. Explore more Nexperia MOSFETs and semiconductor components suitable for precision electronic designs at EnvMart.

Nexperia N-Channel MOSFET 320 mA 60 V Enhancement 3-Pin SC-70 BSS138BKW,115
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Frequently Asked Questions

The maximum continuous drain current for this model is 320 mA, allowing for efficient current handling in various applications.

It operates with a maximum drain-source voltage of 60 V, suitable for medium voltage applications.

The typical forward voltage for this MOSFET is 1.1 V, which helps in reducing power losses during operation.

This model is housed in a compact 3-pin SC-70 package, designed for surface mounting on printed circuit boards.

It has a wide operating temperature range from -55°C to 150°C, ensuring reliable performance under harsh conditions.

The maximum power dissipation rating is 310 mW, which aids in efficient heat management during operation.

The typical gate charge is 0.6 nC at Vgs, facilitating fast switching suitable for high-frequency applications.

This model complies with the automotive standard AEC-Q101, ensuring reliability for automotive applications.

The dimensions of this MOSFET are 3 mm in length, 1.4 mm in width, and 1 mm in height, making it compact for PCB assembly.

The maximum gate-source voltage rating is -20 V to +20 V, allowing for versatile drive voltages in applications.

It is primarily used in switching, load driving, and signal amplification within industrial, automotive, and electronic manufacturing sectors.

This model features an N-channel type, which is typical for enhancement mode transistors used in switching and amplification.

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