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onsemi Darlington Transistor NPN, 8 A, 400 V, 100 W, Minimum DC Current Gain 50, 3-Pin TO-220 MJE5742G

Category Darlington Transistor Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 15.75mm
Length 10.28mm
Model MJE5742G
Mount Type Through Hole
Series MJE5740
Maximum Operating Temperature 150°C
Package Type TO-220
Minimum Operating Temperature -65°C
Pin Count 3
Maximum Continuous Collector Current Ic 8A
Maximum Collector Emitter Voltage Vceo 400V
Number of Elements per Chip 1
Minimum DC Current Gain hFE 50
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 8V
Maximum Collector Emitter Saturation Voltage VceSAT 2V
Maximum Collector Cut-off Current 5mA
Maximum Power Dissipation Pd 100W
onsemi 1 Darlington Transistor NPN, 8 A 400 V HFE 50, 3-Pin TO-220

Key Features

  • This transistor features a maximum power dissipation of 100 watts.
  • It has a minimum DC current gain (hFE) of 50.
  • The package type is TO-220 with through-hole mount and 3 pins.
  • Supports a maximum collector cut-off current of 5 mA and maximum emitter base voltage of 8 volts.
  • Operating temperature ranges from -65°C to 150°C ensuring reliability in various industrial conditions.
  • Its dimension includes a height of 15.75 mm and length of 10.28 mm.
  • Suitable for industrial, power management, and electronic application uses.

Product Description

onsemi MJE5742G Darlington Transistor is a high-power NPN transistor ideal for electronic circuits needing reliable switching at 8 A collector current and withstand voltage of 400 V. With a maximum power dissipation of 100 W, it ensures robust performance in demanding environments.

Packaged in a TO-220 through-hole mount with 3 pins, this transistor facilitates easy mounting and integration in power supply circuits, motor controls, and industrial equipment. The device guarantees a minimum DC current gain (hFE) of 50, allowing efficient amplification for diverse applications including power amplifiers and relay drivers.

Operating temperature range from -65°C to 150°C enables its use in harsh environmental conditions. The maximum collector cut-off current of 5 mA and emitter base voltage of 8 V provide precise control and switching efficiency.

Dimensions of 15.75 mm height and 10.28 mm length assist designers in layout and mechanical considerations. This transistor is ideal for power management and amplification in industrial, laboratory, and commercial electronic components.

Supports construction and maintenance of electronic devices requiring reliable power handling. Use in HVAC controls, manufacturing machinery, and water treatment systems where high power transistor switching is needed. This product is supplied in tubes optimized for insertion into machinery improving production efficiency.

Package contains one piece of the MJE5742G transistor. Explore more on Darlington Transistors and power semiconductors on EnvMart for your electronic component needs.

onsemi Darlington Transistor NPN, 8 A, 400 V, 100 W, Minimum DC Current Gain 50, 3-Pin TO-220 MJE5742G
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Frequently Asked Questions

The maximum continuous collector current for this transistor is 8 A.

It has a maximum collector-emitter voltage rating of 400 V.

The MJE5742G can dissipate a maximum power of 100 W.

The minimum DC current gain (hFE) for the MJE5742G is 50.

This model has a height of 15.75 mm and a length of 10.28 mm.

It is packaged in a TO-220 type with a through-hole mount and 3 pins.

The operating temperature range for the MJE5742G is from -65°C to 150°C.

The maximum emitter-base voltage (VEBO) is 8 V.

The maximum collector cut-off current is 5 mA.

This transistor is suitable for power management, industrial equipment, and electronic applications.

The MJE5742G is an NPN transistor.

The country of origin for the MJE5742G is India.

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