onsemi Darlington Transistor NPN 300 mA 30 V 3-Pin SOT-23 MMBA13LT3G MMBTA13LT3G

onsemi MMBTA13LT3G is a high-gain NPN Darlington transistor designed for reliable electronic switching and amplification in discrete semiconductor applications.

This surface-mount SOT-23 package device supports a maximum continuous collector current of 300 mA and a collector-emitter voltage up to 30 V, making it suitable for moderate load switching and signal amplification.

Its high current gain (hFE) of 5000 ensures enhanced current amplification performance with low input drive current requirements. The transistor integrates two transistor elements in a single chip, packaged into a compact 3-pin configuration enabling efficient PCB layout and minimal board space consumption.

Being qualified to AEC-Q101 automotive standard, it delivers the robustness needed for automotive and industrial environments, with a wide operating temperature range from -55°C to +150°C.

This transistor provides a minimum DC current gain (hFE) of 5000 for efficient amplification. Maximum collector-emitter voltage is rated at 30 V with a collector current capacity of 300 mA. The package type is surface mount SOT-23 with 3 pins supporting easy PCB integration.

Maximum power dissipation is 300 mW ensuring moderate thermal management requirements. It features NPN polarity and contains 2 transistor elements within the chip. Operating temperature range spans from -55°C to 150°C allowing reliable use in varied environments.

The device meets automotive standard AEC-Q101, ensuring suitability for automotive electronics. Collector saturation voltage is low at 1.5 V to facilitate efficient switching. Physical dimensions include height 1.01 mm and length 3.04 mm for compact application.

This Darlington transistor is ideal for industrial, automotive, construction, and electronic manufacturing applications where a reliable, compact, and high-gain amplification device is required.

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