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onsemi Small Signal PNP Transistor SOT-23 3-Pin 200 mA, 40 V DC 100 MHz SMMBT3906LT1G

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.11mm
Length 3.04mm
Model SMMBT3906LT1G
Width 2.64mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -65°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo -40V dc
Minimum DC Current Gain hFE 30
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -5V
Maximum Collector Base Voltage VCBO 40V dc
Maximum Power Dissipation Pd 225mW
Maximum DC Collector Current Idc -200mA
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz

Key Features

  • Designed for surface mounting with a SOT-23 package type.
  • Maximum collector emitter voltage of 40 V DC supports various electronic applications.
  • Handles collector current up to 200 mA ensuring reliable performance.
  • Operates efficiently with a maximum power dissipation of 225 mW.
  • Transition frequency up to 100 MHz for high-speed switching.
  • Wide operating temperature range from -65°C to +150°C for robust industrial use.
  • Minimum DC current gain (hFE) of 30 for consistent transistor amplification.
  • Compact dimensions (3.04 mm length, 2.64 mm width, 1.11 mm height) optimize PCB space.

Product Description

onsemi SMMBT3906LT1G Small Signal PNP Transistor is a 3-pin device in SOT-23 package designed for surface mounting. It supports a maximum DC collector current of 200 mA and a maximum collector emitter voltage of 40 V DC, delivering reliable performance for various electronic applications including switching and amplification.

The transistor is configured as a single PNP type, enabling use in discrete semiconductor applications where compact size and efficient switching are required. It features a maximum power dissipation of 225 mW and a transition frequency up to 100 MHz, making it suitable for high-frequency operation and advanced electronics projects.

This device operates within a wide temperature range from -65°C to 150°C, ensuring stable and robust operation in demanding industrial, laboratory, and commercial environments.

The SMMBT3906LT1G transistor measures 3.04 mm in length, 2.64 mm in width, and 1.11 mm in height, offering a space-saving solution for designers needing compact components. Its 3-pin configuration supports straightforward integration into PCB designs.

Surface mount SOT-23 package for compact PCB layouts. Maximum collector emitter voltage of 40 V DC for versatile usage. 200 mA maximum DC collector current for general-purpose switching. High frequency up to 100 MHz enabling fast switching operations.

Robust operating temperature range from -65 °C to 150 °C. Power dissipation rated at 225 mW suitable for small signal applications. Minimum DC current gain of 30 ensuring consistent gain characteristics. Compact dimensions suitable for high-density PCB applications.

Reliable PNP transistor polarity for typical bipolar transistor circuits.

This bipolar transistor is ideal for industrial electronics, telecommunications, instrumentation, and general semiconductor applications. It is part of onsemi's product range noted for reliability and performance in discrete semiconductor components.

Explore the dedicated Electronics & Electricals category at EnvMart for more semiconductor products optimized for industrial, laboratory, and manufacturing uses. Choose onsemi Bipolar Transistors for trusted quality and precision.

onsemi Small Signal PNP Transistor SOT-23 3-Pin 200 mA, 40 V DC 100 MHz SMMBT3906LT1G
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Frequently Asked Questions

The maximum collector emitter voltage (Vceo) for the SMMBT3906LT1G is 40 V DC.

This transistor can handle a maximum DC collector current of 200 mA.

The transition frequency of this model is up to 100 MHz, suitable for high-speed switching applications.

This transistor measures 3.04 mm in length, 2.64 mm in width, and 1.11 mm in height.

The maximum power dissipation for the SMMBT3906LT1G is 225 mW.

It operates efficiently within a temperature range of -65°C to +150°C.

This model is designed in a SOT-23 package type, suitable for surface mounting.

The minimum DC current gain (hFE) for the SMMBT3906LT1G is 30, ensuring consistent amplification.

The SMMBT3906LT1G has a pin count of 3, configured as a single PNP type.

This transistor is suitable for various electronic applications including switching and amplification in industrial electronics, telecommunications, and instrumentation.

The maximum emitter base voltage (VEBO) for the SMMBT3906LT1G is -5 V.

This model features a single PNP transistor configuration, making it suitable for discrete semiconductor applications.

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