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onsemi Small Signal NPN Transistor, 500 mA Collector Current, 60 V Collector-Emitter Voltage, 3-Pin SOT-23 MMBTA05LT1G

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.11mm
Length 3.04mm
Model MMBTA05LT1G
Width 2.64mm
Mount Type Surface
Series MMBTA05L
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 60V dc
Minimum DC Current Gain hFE 100
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 4V
Maximum Collector Base Voltage VCBO 60V dc
Maximum Power Dissipation Pd 225mW
Maximum DC Collector Current Idc 500mA
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz
Nexperia Transistor, 100 mA NPN, 60 V, 3-Pin SOT-23Brand Nexperia

Key Features

  • This transistor is designed for surface mount applications.
  • It supports a maximum power dissipation of 225 mW.
  • The minimum DC current gain is 100, ensuring reliable amplification.
  • It has a maximum transition frequency of 100 MHz, suitable for high-speed switching.
  • Operating temperatures range from -55°C to 150°C for versatile environment use.
  • Device has single transistor configuration with NPN polarity.
  • Maximum emitter-base voltage is 4 V providing protection under normal conditions.
  • It is a small signal transistor ideal for signal amplification in electronic circuits.

Product Description

The onsemi MMBTA05LT1G is a small signal NPN transistor suitable for a variety of electronic component applications. It supports a maximum DC collector current of 500 mA and can withstand a collector-emitter voltage up to 60 V, making it suitable for low power switching and amplifying tasks.

Housed in a compact 3-pin SOT-23 surface mount package, it offers a power dissipation of 225 mW which enhances its durability in electronic circuits. The device features a minimum DC current gain (hFE) of 100 ensuring dependable signal amplification with a maximum transition frequency (ft) of 100 MHz, enabling high-frequency applications.

This transistor operates reliably within a temperature range from -55°C to 150°C, allowing usage in demanding environments. Its small dimensions (3.04 mm length, 2.64 mm width, and 1.11 mm height) make it ideal for compact circuit board designs in industrial, laboratory, communication, and consumer electronics projects.

With NPN transistor polarity and single transistor configuration, it provides versatile electronic switching and amplification roles on surface mount boards. The device's maximum emitter-base voltage is 4 V, ensuring protection against electrical overstress during operation.

This transistor type is commonly used in industrial electronics, instrumentation, control systems, and signal processing applications requiring efficient switching and signal amplification.

This transistor is designed for surface mount applications. It supports a maximum power dissipation of 225 mW. The minimum DC current gain is 100, ensuring reliable amplification. It has a maximum transition frequency of 100 MHz, suitable for high-speed switching.

Operating temperatures range from -55°C to 150°C for versatile environment use. Compact dimensions: length 3.04 mm, width 2.64 mm, height 1.11 mm. Device has single transistor configuration with NPN polarity. Maximum emitter-base voltage is 4 V providing protection under normal conditions.

It is a small signal transistor ideal for signal amplification in electronic circuits. Explore more high-quality Bipolar Transistors and discrete semiconductor products at EnvMart for your electronic design and manufacturing needs.

onsemi Small Signal NPN Transistor, 500 mA Collector Current, 60 V Collector-Emitter Voltage, 3-Pin SOT-23 MMBTA05LT1G
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Frequently Asked Questions

The maximum DC collector current for this model is 500 mA.

It can withstand a maximum collector-emitter voltage of 60 V.

This model has dimensions of 3.04 mm in length, 2.64 mm in width, and 1.11 mm in height.

The maximum power dissipation for the MMBTA05LT1G is 225 mW.

It operates reliably within a temperature range of -55°C to 150°C.

The minimum DC current gain (hFE) for this transistor is 100.

It has a maximum transition frequency of 100 MHz, suitable for high-speed applications.

This transistor is housed in a compact 3-pin SOT-23 surface mount package.

This model features NPN transistor polarity.

The maximum emitter-base voltage is 4 V, providing protection under normal conditions.

It is commonly used in industrial electronics, instrumentation, control systems, and signal processing applications.

This device has a single transistor configuration, making it suitable for various switching and amplification roles.

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