onsemi Small Signal NPN Transistor, 500 mA Collector Current, 60 V Collector Emitter Voltage, 3-Pin SOT-23 MMBTA05LT3G

onsemi MMBTA05LT3G is a small signal NPN bipolar transistor designed for general purpose amplification and switching applications. It supports a maximum DC collector current of 500 mA and can withstand collector-emitter voltages up to 60 V dc, making it suitable for various electronic circuits.

The transistor utilizes a single transistor configuration in a compact SOT-23 surface mount package with 3 pins, allowing for efficient PCB layout and automated assembly. With a minimum DC current gain of 100 and a maximum power dissipation of 225 mW, it provides reliable operation in low power signal conditions.

Engineered to operate over a broad temperature range from -55°C to 150°C, this transistor exhibits stable performance even under harsh industrial and environmental conditions. Its maximum transition frequency of 100 MHz enables its use in moderate high-frequency circuits.

The physical package dimensions are 3.04 mm in length, 2.64 mm in width, and 1.11 mm in height, adhering to industry standards for discrete small signal transistors.

This transistor does not carry automotive qualification (AEC-Q101 standard) and does not have additional approved standards. It is ideal for use in industrial, consumer electronics, instrumentation, and communication devices requiring robust NPN transistors.

Maximum DC collector current of 500 mA supports moderate power applications. Collector emitter voltage rating of 60 V dc ensures reliable operation in varied circuits. Compact SOT-23 surface mount package with 3 pins enables easy PCB integration.

Minimum DC current gain (hFE) of 100 for efficient amplification. Maximum power dissipation of 225 mW suitable for small signal switching and amplification. Wide operating temperature range from -55°C to 150°C for robust performance.

Maximum transition frequency of 100 MHz for high-frequency applications. Single transistor configuration with NPN polarity. Physical dimensions: Length 3.04 mm, Width 2.64 mm, Height 1.11 mm. Explore more semiconductor components in the Discrete Semiconductors category to match your design requirements.

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