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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 5.3mm |
| Length | 21.08mm |
| Model | TIP147G |
| Mount Type | Through Hole |
| Series | TIP140 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 10A |
| Maximum Collector Emitter Voltage Vceo | 100V |
| Number of Elements per Chip | 1 |
| Minimum DC Current Gain hFE | 500 |
| Transistor Polarity | PNP |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V |
| Maximum Collector Base Voltage VCBO | 100V |
| Maximum Collector Cut-off Current | 2mA |
| Maximum Power Dissipation Pd | 125W |
| onsemi 1 Darlington Transistor PNP, 10 A 100 V HFE | 500, 3-Pin TO-247 |
onsemi TIP147G is a PNP Darlington Transistor with a maximum continuous collector current of 10 A and collector-emitter voltage rating of 100 V. Housed in a TO-247 package with three pins, it offers excellent current gain (minimum DC current gain hFE of 500) and high power dissipation of 125 W, making it ideal for high power and industrial electronic applications.
The transistor operates within a temperature range of -65°C to 150°C and has a maximum emitter base voltage of 5 V. Its maximum collector-emitter saturation voltage is 2 V, favoring efficient electronic switching. With dimensions of 21.08 mm length and 5.3 mm height, it is suitable for through-hole mounting on PCBs.
This component is commonly used in power amplification, switching circuits, industrial control, and semiconductor-based applications requiring high gain and robust power handling. The TIP147G complies with standard transistor requirements but does not carry automotive qualification standards.
Maximum continuous collector current: 10 A. Collector-emitter voltage rating: 100 V. Minimum DC current gain (hFE): 500. TO-247 through-hole package. Power dissipation up to 125 W. Operating temperature from -65°C to 150°C.
PNP transistor polarity. Emitter base voltage max: 5 V. Collector-emitter saturation voltage max: 2 V. Device length: 21.08 mm, height: 5.3 mm.
This transistor is suitable for industrial, electronics manufacturing, power control, and discrete semiconductor applications. Explore more onsemis and related semiconductor categories in EnvMart for professional electronic component sourcing.
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