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onsemi 40 V 3 A Schottky Barrier Diode Single Configuration Through Hole DO-201AD Package 1N5822G
Specifications
| Country of Origin | India |
|---|---|
| Diameter | 5.3mm |
| Brand | onsemi |
| Height | 9.5mm |
| Length | 9.5mm |
| Model | 1N5822G |
| Width | 0.45mm |
| Mount Type | Through Hole |
| Series | 1N5822 |
| Maximum Operating Temperature | 125°C |
| Package Type | DO-201AD |
| Minimum Operating Temperature | -65°C |
| Pin Count | 2 |
| Maximum Continuous Forward Current If | 3A |
| Peak Reverse Repetitive Voltage Vrrm | 40V |
| Diode Configuration | Single |
| Rectifier Type | Schottky |
| Peak Reverse Current Ir | 20mA |
| Peak Non-Repetitive Forward Surge Current Ifsm | 80A |
| Maximum Forward Voltage Vf | 950mV |
| Peak Reverse Recovery Time trr | 1.6ns |
Key Features
- Features a single diode configuration suitable for rectification applications.
- Designed with a through-hole mount type for easy PCB installation.
- Maximum continuous forward current rating of 3 amperes ensures reliable performance.
- Peak reverse repetitive voltage of 40 volts supports robust blocking capabilities.
- Peak non-repetitive forward surge current rating of 80 amperes provides protection against transient surges.
- Compact dimensions with 9.5 mm length, height, diameter of 5.3 mm, and width of 0.45 mm.
- Maximum forward voltage drop of 950 mV minimizes power loss during conduction.
- Operating temperature range from -65°C to 125°C supports harsh industrial environments.
Product Description
onsemi 1N5822G Schottky Barrier Diode offers an efficient solution for low voltage, high-frequency rectification tasks. This diode employs the Schottky barrier principle using barrier metal technology to deliver optimal forward voltage drop and reverse current tradeoffs. Packaged in a DO-201AD through-hole mount configuration, it facilitates easy installation on printed circuit boards for diverse industrial electronic applications.
The diode supports a maximum continuous forward current of 3 A and a peak reverse repetitive voltage of 40 V, making it suitable for power rectification and polarity protection roles. It withstands peak non-repetitive forward surge currents up to 80 A, ensuring robustness against transient events. Its fast switching capability with a peak reverse recovery time of 1.6 ns suits high-frequency power conversion circuits.
With an operating temperature range from -65°C to 125°C, the diode is reliable under demanding thermal conditions prevalent in industrial, laboratory, and power electronics assemblies. The device features a low maximum forward voltage drop of 950 mV, contributing to energy-efficient operation with reduced conduction losses.
The physical dimensions - 9.5 mm length and height, 5.3 mm diameter, and 0.45 mm width - allow for compact circuit design without sacrificing performance. The epoxy molded lightweight package weighing 11.7 mg supports automated board assembly and stress protection, enhancing product durability.
Single diode configuration for precise rectification tasks. Through-hole mounting for easy assembly and replacement. High surge current rating for protection against transient voltage spikes. Fast recovery and low forward voltage drop for efficient power management.
Wide operating temperature range suited for industrial usage. Compact and lightweight epoxy molded package. Designed for automated board assembly and reliability.
This diode is ideal for industrial, power supply, automotive, and general electronic applications requiring reliable, high-efficiency Schottky rectification. It complies with RoHS and environmental standards, ensuring sustainability and quality assurance.
Explore more semiconductor diodes and Schottky barrier rectifiers for advanced electronic designs at EnvMart.
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Frequently Asked Questions
The maximum continuous forward current rating of this diode is 3 amperes.
The peak reverse repetitive voltage for the 1N5822G is 40 volts.
The dimensions of the DO-201AD package are 9.5 mm in length and height, with a diameter of 5.3 mm and a width of 0.45 mm.
The peak non-repetitive forward surge current rating is 80 amperes.
The operating temperature range for this model is from -65°C to 125°C.
The maximum forward voltage drop of this diode is 950 mV.
The 1N5822G uses a through-hole mount type for installation on printed circuit boards.
The peak reverse recovery time for this diode is 1.6 nanoseconds.
The 1N5822G diode has 2 pins.
This diode features a single diode configuration suitable for rectification applications.
The peak reverse current for the 1N5822G is 20 mA.
The 1N5822G is manufactured in India.
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