onsemi NPN Power Transistor, 15 A Maximum DC Collector Current, 120 V Collector Emitter Voltage, 2-Pin TO-204 MJ15015G

onsemi MJ15015G is a high-performance NPN power transistor designed for use in industrial and electronic applications requiring robust switching and amplification capabilities. This transistor features a maximum DC collector current of 15 amperes and a collector-emitter voltage rating of 120 volts, making it suitable for medium-power circuits.

The device is housed in a durable 2-pin TO-204 package designed for through-hole mounting, ensuring stable physical and electrical connections. Its operating temperature ranges from -65°C up to 200°C, enabling reliable performance under harsh thermal conditions.

With a maximum power dissipation of 180 watts, this transistor can handle significant power loads in various industrial, automotive, and consumer electronics circuits. The device's maximum transition frequency of 1 MHz allows for effective high-frequency switching and amplification tasks.

The MJ15015G transistor boasts a minimum DC current gain (hFE) of 20, supporting strong signal amplification for bipolar transistor applications. Its 2-pin configuration simplifies integration into electronic assemblies.

Physical dimensions of the transistor are approximately 39.37 mm in length, 26.67 mm in width, and 0.82 mm in height, accommodating common PCB layouts and thermal management solutions. This ON Semiconductor device is ideal for power management, signal amplification, and switching in industrial, laboratory, and general-purpose electronic design contexts.

Supports maximum DC collector current of 15 amperes. Maximum collector-emitter voltage rating of 120 volts. Power dissipation capability up to 180 watts. 2-pin configuration in TO-204 package ensuring reliable through-hole mounting.

NPN transistor polarity for standard bipolar transistor applications. Operating temperature range from -65°C to 200°C. Maximum transition frequency of 1 MHz for switching applications. Pin count of 2 suitable for simple circuit designs.

Dimensions approximately 39.37 mm length, 26.67 mm width, and 0.82 mm height. Minimum DC current gain (hFE) of 20 ensuring amplification efficiency. Explore a comprehensive range of Power Transistors and semiconductor devices at EnvMart to find solutions tailored for your industrial, laboratory, and manufacturing needs.