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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 4.83mm |
| Length | 10.29mm |
| Model | MBRB20200CTT4G |
| Width | 9.65mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Maximum Continuous Forward Current If | 20A |
| Peak Reverse Repetitive Voltage Vrrm | 200V |
| Diode Configuration | Common Cathode |
| Rectifier Type | Schottky |
| Peak Reverse Current Ir | 50mA |
| Peak Non-Repetitive Forward Surge Current Ifsm | 150A |
| Maximum Forward Voltage Vf | 900mV |
onsemi MBRB20200CTT4G is a high-performance Schottky barrier diode designed for power electronic applications requiring efficient switching and low forward voltage drops. Rated for a maximum continuous forward current of 20 A and peak reverse repetitive voltage of 200 V, it is suitable for power rectification, voltage clamping, and other discrete semiconductor tasks in industrial and automotive sectors.
This diode features a surface mount TO-263 package facilitating robust mechanical and thermal performance in compact circuit assemblies. Its common cathode configuration and Schottky rectifier structure provide fast switching capabilities and reduced power dissipation, enhancing overall system efficiency.
The device operates reliably across a wide temperature range of -65°C to 150°C, with a peak non-repetitive forward surge current rating of 150 A, making it ideal for transient load conditions. Its small physical footprint with precise dimensions (10.29 mm length, 9.65 mm width, 4.83 mm height) supports dense PCB layouts.
onsemi's MBRB20200CTT4G diode is certified to AEC-Q101 automotive standards, ensuring high quality and durability for automotive applications including power supplies, converters, and electrical protection circuits.
Surface mount TO-263 package for reliable mounting. 20 A maximum continuous forward current rating. 200 V peak reverse voltage blocking capability. Common cathode diode configuration optimized for Schottky barrier. 900 mV maximum forward voltage drop for efficiency.
Operating temperature range from -65°C to 150°C. 150 A peak forward surge current capability. Compact dimensions with length 10.29 mm, width 9.65 mm, height 4.83 mm. Complies with AEC-Q101 automotive standard.
This component is broadly used in industrial electronics, automotive systems, power supplies, and electronic manufacturing requiring fast switching, low forward voltage losses, and high reliability.
Explore EnvMart's semiconductor offerings to find onsemi components and related Schottky Diode solutions for your design needs.
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