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| Country of Origin | India |
|---|---|
| Diameter | 3.2mm |
| Brand | Vishay |
| Height | 4.5mm |
| Length | 34.4mm |
| Model | TEFD4300 |
| Packaging | Bulk |
| Width | 4.24mm |
| Mount Type | Through Hole |
| Series | TEFD |
| Short Circuit Current | 15μA |
| Maximum Operating Temperature | 100°C |
| Package Type | T-1 |
| Minimum Operating Temperature | -40°C |
| Polarity | Forward |
| Dark Current | 3nA |
| Open Circuit Voltage | 350mV |
| Package Form | T-1 |
| Standards/Approvals | RoHS |
| Number of Pins | 2 |
| Typical Fall Time | 100ns |
| Automotive Standard | AEC-Q101 |
| Wavelength of Peak Sensitivity | 950nm |
| Spectrums Detected | Infrared |
| Breakdown Voltage | 60V |
| Minimum Wavelength Detected | 350nm |
| Maximum Wavelength Detected | 1120nm |
| Angle of Half Sensitivity | ± 20 ° |
Vishay TEFD4300 is a silicon PIN infrared photodiode presented in a standard 3mm diameter through-hole T-1 package. It features a high radiant sensitivity with a ± 20° angle of half sensitivity and a peak sensitivity wavelength of 950nm.
This photodiode suits industrial and electronic applications such as high-speed photo detection for data transmission, optical switches, counters, sorters, interrupters, encoders, and position sensors in laboratory, manufacturing, and electronics engineering settings.
The device exhibits fast typical rise and fall times of 100ns, enabling rapid response to changing optical signals. It operates reliably under extreme temperature conditions from -40°C to 100°C and provides a low dark current of 3nA to maintain sensitivity and accuracy. Its breakdown voltage is rated at 60V with an open circuit voltage of 350mV and short circuit current of 15μA.
Compliance with RoHS standards ensures environmental safety, and adherence to the automotive AEC-Q101 standard guarantees quality in automotive electronics. Its through-hole T-1 leaded package with 2 pins facilitates easy installation in electronic assemblies.
High radiant sensitivity for visible and near infrared radiation. Fast response times with typical rise and fall time of 100ns. Operating temperature from -40°C to 100°C for robust performance. Low dark current of 3nA minimizes noise in detection applications.
Breakdown voltage of 60V and open circuit voltage of 350mV ensure operational reliability. Complies with RoHS and automotive AEC-Q101 standards. Through-hole T-1 package designed for easy PCB mounting and integration. Ideal for high speed photo detectors, optical switches, encoders, position sensors, and other IR detection uses.
This Vishay infrared photodiode is a versatile and reliable component suitable for electronic component inventories and advanced optical sensor designs. Explore the Electronics Components category on EnvMart for more Photodiode and sensor solutions.
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