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Vishay Infrared Photodiode, Through Hole T-1 Package, ± 20 ° Angle of Half Sensitivity TEFD4300

Category Photodiode Brand Vishay Condition New

Specifications

Country of Origin India
Diameter 3.2mm
Brand Vishay
Height 4.5mm
Length 34.4mm
Model TEFD4300
Packaging Bulk
Width 4.24mm
Mount Type Through Hole
Series TEFD
Short Circuit Current 15μA
Maximum Operating Temperature 100°C
Package Type T-1
Minimum Operating Temperature -40°C
Polarity Forward
Dark Current 3nA
Open Circuit Voltage 350mV
Package Form T-1
Standards/Approvals RoHS
Number of Pins 2
Typical Fall Time 100ns
Automotive Standard AEC-Q101
Wavelength of Peak Sensitivity 950nm
Spectrums Detected Infrared
Breakdown Voltage 60V
Minimum Wavelength Detected 350nm
Maximum Wavelength Detected 1120nm
Angle of Half Sensitivity ± 20 °

Key Features

  • Silicon PIN photodiode suitable for infrared spectrum detection.
  • Operates within a wavelength range of 350nm to 1120nm.
  • Compact T-1 through-hole package with dimensions Ø 3.2mm diameter and 34.4mm length.
  • Angle of half sensitivity ± 20 degrees ensures targeted detection area.
  • Typical rise and fall time of 100ns for high-speed applications.
  • Operating temperature range from -40°C to 100°C enables industrial versatility.
  • Compliant with RoHS standards ensuring environmental safety.
  • Includes AEC-Q101 automotive standard certification.

Product Description

Vishay TEFD4300 is a high-performance silicon PIN photodiode packaged in a through-hole T-1 (3mm) format, tailored for infrared light detection applications. With a peak sensitivity wavelength of 950nm and a broad detection range from 350nm to 1120nm, it is well-suited for detecting near-infrared radiation.

The device features a compact form factor with a 3.2mm diameter and a length of 34.4mm that facilitates easy mounting in various electronic assemblies. Its angle of half sensitivity is ± 20 degrees, providing focused sensing capability.

Designed for reliability and speed, the TEFD4300 demonstrates fast response times with typical rise and fall times of 100ns. It supports operation across a wide temperature range from -40°C to +100°C, making it suitable for demanding industrial environments.

This photodiode is not amplified and functions in forward polarity with a dark current of 3nA and short circuit current of 15μA. It holds a breakdown voltage of 60V and an open circuit voltage of 350mV, which contribute to its stable performance.

Applications include high speed photo detectors for data transmission, optical switches, counters, sorters, interrupters, encoders, and position sensors utilized in industrial automation, manufacturing equipment, and automotive electronics.

Silicon PIN Photodiode with high radiant sensitivity for infrared detection. Standard T-1 package ensures compatibility with through-hole mounting. Fast response times enable use in dynamic sensing applications. Wide operating temperature range for extended industrial use.

Meets RoHS and AEC-Q101 standards for safety and automotive reliability. Compatible with infrared emitter series for enhanced system design. Explore additional Vishay optoelectronic components and related products within EnvMart to fulfill your electronic component needs.

Vishay Infrared Photodiode, Through Hole T-1 Package, ± 20 ° Angle of Half Sensitivity TEFD4300
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Frequently Asked Questions

This model operates within a wavelength range of 350nm to 1120nm, making it suitable for infrared spectrum detection.

The angle of half sensitivity for this photodiode is ± 20 degrees, allowing for a targeted detection area.

The T-1 package has a diameter of 3.2mm and a length of 34.4mm, facilitating easy mounting in electronic assemblies.

It has a typical rise and fall time of 100ns, which is suitable for high-speed applications.

This photodiode operates within a temperature range of -40°C to +100°C, making it versatile for industrial applications.

The dark current for this model is specified at 3nA, contributing to its performance in low-light conditions.

The short circuit current for this photodiode is 15μA, which is relevant for its operational characteristics.

Yes, it is compliant with RoHS standards and holds AEC-Q101 automotive standard certification, ensuring safety and reliability.

The breakdown voltage of the TEFD4300 is 60V, which is important for its operational limits.

This photodiode features 2 pins, which are necessary for its through-hole mounting configuration.

The peak sensitivity wavelength of this model is 950nm, optimized for detecting near-infrared radiation.

The TEFD4300 is designed for through-hole mounting, making it compatible with various electronic assemblies.

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