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Nexperia N-Channel MOSFET, 8.6 A, 20 V Enhancement Mode, SOT-23 3-Pin Package PMV16XNR

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Nexperia N-Channel MOSFET, 8.6 A, 20 V Enhancement Mode, SOT-23 3-Pin Package PMV16XNR

Name: Nexperia N-Channel MOSFET, 8.6 A, 20 V Enhancement Mode, SOT-23 3-Pin Package PMV16XNR
Brand: Nexperia
SKU: 230651
Price: 0.21 USD
Availability: InStock

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Category MOSFETs Brand Nexperia Condition New

Specifications

Country of Origin	China
Brand	Nexperia
Height	1mm
Length	3mm
Model	PMV16XNR
Width	1.4mm
Mount Type	Surface
Series	PMV16XN
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	8.6A
Maximum Drain Source Voltage Vds	20V
Maximum Drain Source Resistance Rds	33mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	6.94W
Typical Gate Charge Qg @ Vgs	13.4nC
Maximum Gate Source Voltage Vgs	12V

Key Features

Uses Trench MOSFET technology for enhanced performance and reliability.
Low threshold voltage enables efficient switching at low drive voltages.
Has a maximum power dissipation rating of 6.94 W.
Designed for surface mount applications in portable and power management circuits.
Typical gate charge of 13.4 nC at Vgs that supports fast switching.
Operating temperature range from -55°C to 150°C for robustness in varied environments.
Ideal for LED drivers, low-side load switching, and switching circuit applications.
Manufactured in China with no automotive standard approvals.

Product Description

Nexperia PMV16XNR is a N-channel enhancement mode MOSFET designed for low voltage portable applications requiring efficient switching. Packaged in a compact 3-pin SOT-23 (TO-236AB) surface-mount device, it incorporates advanced Trench MOSFET technology that provides low threshold voltage and very fast switching capabilities.

This MOSFET supports a maximum continuous drain current of 8.6 A and a maximum drain-source voltage rating of 20 V. Its maximum power dissipation reaches up to 6.94 W, making it suitable for power management tasks in electronic circuits.

Typical gate charge is 13.4 nC at the gate-source voltage, facilitating rapid switching performance essential in LED driver circuits, low-side load switches, and switching applications in portable and industrial devices. It operates reliably in a wide temperature range from -55°C to 150°C, ensuring stability in diverse ambient conditions.

The device dimensions are 3 mm in length, 1.4 mm in width, and 1 mm in height. The package is surface-mounted for easy integration into printed circuit boards. While it does not have specific automotive standards, it is a trusted component for general electronic and power semi-conductor applications.

Manufactured in China, this MOSFET provides a robust and compact solution for power switching applications requiring high current handling with low voltage drive. Uses Trench MOSFET technology for high reliability and switching efficiency.

Compact 3-pin SOT-23 surface-mount package. Maximum continuous drain current of 8.6 A and voltage rating of 20 V. Enhanced power dissipation capability of 6.94 W for thermal management. Wide operating temperature range from -55°C to 150°C supporting harsh environments.

Low threshold voltage for low-voltage control applications. Typical gate charge of 13.4 nC enabling fast switching performance. Ideal for LED drivers, power management, and switching circuits. Explore more high-quality MOSFETs and Nexperia products on EnvMart for industrial, electronic component, and power management applications.