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| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 2.1mm |
| Length | 4.6mm |
| Model | US1A-13-F |
| Width | 2.92mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | SMA |
| Sub Type | Silicon Junction |
| Minimum Operating Temperature | -65°C |
| Pin Count | 2 |
| Diode Configuration | Single |
| Peak Non-Repetitive Forward Surge Current Ifsm | 30A |
| Maximum Forward Voltage Vf | 1V |
| Peak Reverse Recovery Time trr | 75ns |
| Maximum Forward Current If | 1A |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 50V |
DiodesZetex US1A-13-F is a high-quality silicon junction switching diode designed for use in industrial electronics, computer hardware, power supplies, and telecommunications equipment. This single diode in an SMA surface mount package supports a maximum forward current of 1 ampere and a peak reverse repetitive voltage of 50 volts. Its fast recovery time of 75 nanoseconds makes it ideal for high-speed switching applications commonly found in embedded systems and power management circuits.
The diode offers a maximum forward voltage of 1 volt at rated current, ensuring minimal conduction loss and efficient operation. It supports a peak non-repetitive forward surge current of 30 amperes, providing resilience against transient overloads. The operating temperature range spans from -65°C to 150°C, allowing reliable performance in harsh environments, such as automotive and industrial electronics.
Physically, the US1A-13-F measures 4.6 mm in length, 2.92 mm in width, and 2.1 mm in height, with a two-pin configuration enabling easy PCB integration. Its surface mount technology package facilitates automated assembly and compact designs.
Maximum forward current rating of 1 ampere for reliable switching performance. SMA surface mount package ensures compact and robust mounting on PCBs. Maximum peak reverse repetitive voltage of 50 volts for protection and reliability.
Peak reverse recovery time of 75 nanoseconds for fast switching applications. Operate within a temperature range of -65°C to 150°C for durability in diverse environments. Maximum forward voltage drop of 1 volt minimizing power loss during conduction.
Peak non-repetitive forward surge current capability up to 30 amperes. Compact physical dimensions: length 4.6 mm, width 2.92 mm, height 2.1 mm. Two-pin configuration suitable for switching circuits and diode applications.
This silicon junction diode suits industrial, laboratory, telecommunications, and electronic manufacturing applications requiring efficient switching diodes. It is ideal for use in DC-DC converters, rectifier circuits, and switching power supplies.
Explore a broad selection of Switching Diodes and other discrete semiconductor components in the EnvMart electronics category to find compatible parts and complementary components for your projects.
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