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DiodesZetex Single Silicon Junction Switching Diode 1 A 50 V SMB S1AB-13-F

Category Switching Diode Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 2.3mm
Length 4.57mm
Model S1AB-13-F
Width 3.94mm
Mount Type Surface
Series S1AB
Maximum Operating Temperature 150°C
Package Type SMB
Sub Type Silicon Junction
Minimum Operating Temperature -65°C
Pin Count 2
Diode Configuration Single
Peak Non-Repetitive Forward Surge Current Ifsm 30A
Maximum Forward Voltage Vf 1.1V
Peak Reverse Recovery Time trr 3ns
Maximum Forward Current If 1A
Maximum Peak Reverse Repetitive Voltage Vrrm 50V

Key Features

  • This diode features a silicon junction and surface mount SMB package type.
  • It has a maximum forward voltage of 1.1 V ensuring efficient conduction.
  • The peak reverse recovery time is 3 ns, suitable for fast switching applications.
  • Operation temperature ranges from -65°C minimum to 150°C maximum.
  • It provides a peak non-repetitive forward surge current up to 30 A.
  • The physical dimensions are length 4.57 mm, width 3.94 mm, and height 2.3 mm.
  • This diode is designed for discrete semiconductor switching applications.
  • The pin count is 2 for easy PCB integration.

Product Description

DiodesZetex S1AB-13-F is a single silicon junction switching diode designed for reliable performance in electronic circuits. It supports a maximum forward current of 1 A and a peak reverse voltage of 50 V, making it suitable for a variety of switching applications in industrial and commercial electronics.

Featuring a compact SMB surface-mount package with 2 pins, it facilitates efficient PCB mounting and space-saving design. The diode offers a low forward voltage of 1.1 V and a swift peak reverse recovery time of 3 ns, which is essential for high-speed switching circuits and power management modules.

The diode operates effectively in harsh temperature conditions, from -65°C to 150°C, ensuring durability in demanding environments such as industrial automation, power supplies, and signal processing applications. It can withstand peak non-repetitive forward surge currents up to 30 A, enhancing fault tolerance during transient events.

Physical dimensions are length 4.57 mm, width 3.94 mm, and height 2.3 mm, allowing integration into dense circuit boards. This diode meets the S1AB series standard and does not include automotive certification, focusing rather on general industrial and commercial usage.

This diode features a silicon junction and surface mount SMB package type. It has a maximum forward voltage of 1.1 V ensuring efficient conduction. The peak reverse recovery time is 3 ns, suitable for fast switching applications.

Operation temperature ranges from -65°C minimum to 150°C maximum. It provides a peak non-repetitive forward surge current up to 30 A. The physical dimensions are length 4.57 mm, width 3.94 mm, and height 2.3 mm. This diode is designed for discrete semiconductor switching applications.

The pin count is 2 for easy PCB integration.

This product is ideal for use in industrial electronics, power supplies, and various discrete semiconductor applications where fast switching and reliability are critical. EnvMart offers this high-quality DiodesZetex Switching Diode for efficient circuit design and performance enhancement.

DiodesZetex Single Silicon Junction Switching Diode 1 A 50 V SMB S1AB-13-F
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Frequently Asked Questions

The maximum forward current of this diode is 1 A.

It has a peak reverse voltage rating of 50 V.

The maximum forward voltage drop is 1.1 V.

The peak reverse recovery time is 3 ns, making it suitable for fast switching applications.

The physical dimensions are 4.57 mm in length, 3.94 mm in width, and 2.3 mm in height.

It operates effectively within a temperature range of -65°C to 150°C.

This diode uses a surface mount SMB package type.

It has a pin count of 2, facilitating easy PCB integration.

The diode can withstand a peak non-repetitive forward surge current of up to 30 A.

It is designed for discrete semiconductor switching applications in industrial and commercial electronics.

Yes, the fast peak reverse recovery time of 3 ns makes it suitable for high-speed switching circuits.

The country of origin for this diode is India.

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