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DiodesZetex Switching Diode Single 3 A Surface Mount Silicon Junction 1000 V SMB Package RS3MB-13-F
Specifications
| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 2.3mm |
| Length | 4.57mm |
| Model | RS3MB-13-F |
| Width | 3.94mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | SMB |
| Sub Type | Silicon Junction |
| Minimum Operating Temperature | -65°C |
| Pin Count | 2 |
| Diode Configuration | Single |
| Peak Non-Repetitive Forward Surge Current Ifsm | 100A |
| Maximum Forward Voltage Vf | 1.3V |
| Peak Reverse Recovery Time trr | 500ns |
| Maximum Forward Current If | 3A |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 1000V |
Key Features
- The diode features a 2-pin SMB package suitable for efficient surface mounting.
- It supports a peak forward surge current of 100 A ensuring robustness under transient conditions.
- The device has a maximum forward voltage of 1.3 V for efficient conduction.
- Operating temperature range is from -65°C to 150°C, allowing use in harsh environments.
- Peak reverse recovery time of 500 nanoseconds enables fast switching performance.
- The diode does not conform to automotive standards but is ideal for general semiconductor applications.
Product Description
DiodesZetex RS3MB-13-F is a high-performance switching diode featuring a single silicon junction design. Rated for a maximum forward current of 3 A and a peak inverse voltage of 1000 V, this diode is supplied in a compact SMB surface mount package making it suitable for automated PCB assembly processes.
The diode ensures fast switching with a peak reverse recovery time of 500 nanoseconds and a maximum forward voltage drop of 1.3 V, optimizing power efficiency in electronic circuits. Its ability to endure peak non-repetitive forward surge currents up to 100 A provides enhanced reliability under transient load conditions.
Operating over a wide temperature range from -65°C to 150°C, the RS3MB-13-F is well-suited for use in industrial, automotive (non-automotive standard), power supply, and general electronics applications where reliable switching diode performance is needed.
This silicon junction switching diode features a two-pin configuration with precise mechanical dimensions (length 4.57 mm, width 3.94 mm, height 2.3 mm) enabling compact and space-efficient designs. Its surface mount SMB package supports high volume manufacturing and automated assembly.
The diode provides efficient, fast switching for digital and power electronics. Compact size facilitates integration in dense electronic assemblies. Wide operating temperature ensures durability in industrial environments.
High peak reverse voltage protects circuits against voltage spikes. Peak surge current capability enhances transient handling. Surface mount package enables modern PCB manufacturing techniques. Reliable silicon junction technology with consistent performance.
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Frequently Asked Questions
The maximum forward current of this diode is 3 A.
The peak reverse recovery time is 500 nanoseconds, enabling fast switching performance.
The maximum peak reverse repetitive voltage rating is 1000 V.
The operating temperature range is from -65°C to 150°C, making it suitable for harsh environments.
It is supplied in an SMB surface mount package, which is suitable for automated PCB assembly.
The maximum forward voltage drop is 1.3 V, optimizing power efficiency in electronic circuits.
It can handle a peak non-repetitive forward surge current of up to 100 A.
The dimensions are 4.57 mm in length, 3.94 mm in width, and 2.3 mm in height.
This model has a pin count of 2, featuring a single diode configuration.
This diode does not conform to automotive standards but is suitable for general semiconductor applications.
The diode features a single silicon junction configuration.
The country of origin for this diode is India.
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