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Taiwan Semiconductor Silicon Junction 150 A 100 V 2-Pin MiniMELF Switching Diode LL4448 L1

Category Switching Diodes Brand Taiwan Semiconductor Condition New

Specifications

Country of Origin India
Diameter 1.6mm
Brand Taiwan Semiconductor
Height 1.6mm
Length 3.7mm
Model LL4448 L1
Width 1.6mm
Mount Type Surface
Maximum Operating Temperature 200°C
Package Type MiniMELF
Sub Type Silicon Junction
Minimum Operating Temperature -65°C
Pin Count 2
Maximum Power Dissipation Pd 500mW
Diode Configuration Single
Peak Non-Repetitive Forward Surge Current Ifsm 2A
Maximum Forward Voltage Vf 1V
Peak Reverse Recovery Time trr 4ns
Maximum Forward Current If 150A
Maximum Peak Reverse Repetitive Voltage Vrrm 100V

Key Features

  • MiniMELF surface mount package provides compact and efficient assembly.
  • Maximum forward current of 150 A suitable for high-current switching applications.
  • Peak reverse voltage of 100 V ensures durability against voltage spikes.
  • Fast peak reverse recovery time of 4 ns enhances switching speed.
  • Wide operating temperature range from -65°C to 200°C for industrial environments.
  • Low maximum forward voltage drop of 1 V improves efficiency.
  • Power dissipation rated at 500 mW supports reliable operation.
  • 2-Pin configuration enables simple integration into circuits.

Product Description

Taiwan Semiconductor LL4448 L1 silicon junction industrial switching diode is designed with a compact 2-pin MiniMELF surface mount package, delivering dependable high-performance for power electronic circuits.

Its maximum forward current rating of 150 A and peak reverse repetitive voltage of 100 V offer robust operation in demanding industrial, electronic, and power management applications. The diode features a maximum forward voltage of 1 V, minimizing power loss and thermal load.

The fast peak reverse recovery time of 4 ns facilitates efficient switching in high-speed circuits, contributing to improved device responsiveness and reduced electromagnetic interference. It handles power dissipation up to 500 mW and operates reliably within a wide temperature range from -65°C to 200°C, suitable for harsh environmental conditions in industrial and automotive circuitry.

MiniMELF surface mount packaging allows space-saving PCB design and automated assembly. High surge current tolerance up to 2 A enhances transient stability. Wide temperature range enables deployment in extreme thermal environments.

2-pin configuration accommodates straightforward circuit integration. Ideal for applications in power switching, rectification, and signal regulation within industrial, electronic components, and semiconductor-based design projects.

Overall, the LL4448 L1 diode from Taiwan Semiconductor is a reliable component for discrete semiconductor needs, offering high current handling in a compact form factor optimized for modern surface mounting technology.

Explore a wide range of semiconductors and Switching Diodes at EnvMart for your industrial and electronic component requirements.

Taiwan Semiconductor Silicon Junction 150 A 100 V 2-Pin MiniMELF Switching Diode LL4448 L1
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Frequently Asked Questions

The maximum forward current rating of the LL4448 L1 diode is 150 A, making it suitable for high-current switching applications.

The peak reverse repetitive voltage for the LL4448 L1 diode is 100 V, ensuring durability against voltage spikes.

The peak reverse recovery time of this diode is 4 ns, which enhances its switching speed.

The LL4448 L1 diode has a diameter, height, and width of 1.6 mm, and a length of 3.7 mm.

The power dissipation rating for the LL4448 L1 diode is 500 mW, supporting reliable operation.

This diode operates within a wide temperature range from -65°C to 200°C, making it suitable for industrial environments.

The LL4448 L1 diode uses a MiniMELF surface mount package, which allows for compact assembly.

The LL4448 L1 diode has a 2-pin configuration, enabling simple integration into circuits.

The maximum forward voltage drop for this diode is 1 V, which improves efficiency.

This diode is suitable for power switching, rectification, and signal regulation in industrial and electronic components.

The LL4448 L1 diode can tolerate a peak non-repetitive forward surge current of up to 2 A, enhancing its transient stability.

The LL4448 L1 diode is manufactured in India.

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