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Nexperia P-Channel MOSFET, Type BSS84, 130 mA, 50 V, Enhancement Mode, 3-Pin SOT-23 BSS84

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Nexperia P-Channel MOSFET, Type BSS84, 130 mA, 50 V, Enhancement Mode, 3-Pin SOT-23 BSS84

Name: Nexperia P-Channel MOSFET, Type BSS84, 130 mA, 50 V, Enhancement Mode, 3-Pin SOT-23 BSS84
Brand: Nexperia
SKU: 224290
Price: 0.06 USD
Availability: InStock

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Category MOSFET Brand Nexperia Condition New

Specifications

Country of Origin	China
Brand	Nexperia
Height	1mm
Length	3mm
Model	BSS84
Width	1.4mm
Mount Type	Surface
Series	BSS84
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-65°C
Pin Count	3
Automotive Standard	AEC-Q101
Channel Type	Type P
Maximum Continuous Drain Current Id	130mA
Maximum Drain Source Voltage Vds	50V
Maximum Drain Source Resistance Rds	10Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	250mW
Typical Gate Charge Qg @ Vgs	0.26nC
Maximum Gate Source Voltage Vgs	-20, +20V

Key Features

This transistor features a 3-pin SOT-23 package suitable for compact PCB designs.
It supports a maximum continuous drain current of 130 mA.
The maximum drain-source voltage rating is 50 V, ensuring robust operation.
Operating temperature ranges from -65°C to 150°C for versatile environmental use.
Maximum power dissipation is rated at 250 mW for reliable thermal performance.
With an Rds(on) max of 10 Ω, it provides efficient switching with low power loss.
The device complies with the automotive standard AEC-Q101 for enhanced quality assurance.
Typical gate charge is 0.26 nC at Vgs, aiding fast switching speeds.

Product Description

Nexperia BSS84 is a P-Channel MOSFET transistor primarily used in electronic circuits requiring efficient low current switching capabilities. It features an enhancement mode channel type with a maximum drain current rating of 130 mA and a maximum voltage of 50 V, making it suitable for a range of low power and signal switching applications.

The transistor comes in a compact 3-pin SOT-23 surface-mount package ideal for high-density circuit boards in industrial, automotive, and commercial electronics.

Key electrical parameters include a maximum drain-source resistance of 10 Ω and maximum power dissipation of 250 mW. It operates reliably in extreme temperature conditions, from -65°C up to 150°C, catering to harsh operating environments.

Compliance with the AEC-Q101 automotive standard makes it trustworthy for automotive electronic systems and related industrial uses. Its tiny form factor with a height of 1 mm, length of 3 mm, and width of 1.4 mm enables flexible design integration.

This BSS84 MOSFET's low typical gate charge of 0.26 nC facilitates efficient switching and energy saving in circuits such as power management, signal conditioning, and small motor control.

This MOSFET supports surface mounting, aiding automated assembly processes. Its robust construction and electrical characteristics allow use in power-sensitive devices and automotive applications. The device is manufactured in China and distributed globally for electronic component needs.

Choose the Nexperia BSS84 P-Channel MOSFET to ensure reliability, quality, and performance in your next semiconductor design project. Browse EnvMart's latest semiconductor inventory for more components compatible with your application requirements.