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DiodesZetex Silicon Junction Switching Diode 3-Pin SOT-23 85 V 160 mA BAV199-7-F

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DiodesZetex Silicon Junction Switching Diode 3-Pin SOT-23 85 V 160 mA BAV199-7-F

Name: DiodesZetex Silicon Junction Switching Diode 3-Pin SOT-23 85 V 160 mA BAV199-7-F
Brand: DiodesZetex
SKU: 223701
Price: 0.04 USD
Availability: InStock

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Category Semiconductor Brand DiodesZetex Condition New

Specifications

Country of Origin	China
Brand	DiodesZetex
Height	1.03mm
Length	2.9mm
Model	BAV199-7-F
Width	2.4mm
Mount Type	Surface
Series	BAV199
Maximum Operating Temperature	150°C
Package Type	SOT-23
Sub Type	Silicon Junction
Minimum Operating Temperature	-65°C
Pin Count	3
Maximum Power Dissipation Pd	250mW
Diode Configuration	Series
Peak Non-Repetitive Forward Surge Current Ifsm	4A
Maximum Forward Voltage Vf	1.25V
Peak Reverse Recovery Time trr	3μs
Maximum Forward Current If	160mA
Maximum Peak Reverse Repetitive Voltage Vrrm	85V

Key Features

Handles a peak repetitive reverse voltage of 85 V.
Supports maximum power dissipation of 250 mW for reliable performance.
Peak non-repetitive forward surge current is 4 A ensuring transient robustness.
Fast switching with peak reverse recovery time of 3 microseconds.
Operates in temperature range from -65°C to 150°C for diverse environments.
Compact dimensions of 2.9 mm length, 2.4 mm width, and 1.03 mm height for space saving usage.
Package type is SOT-23 with 3 pins for easy surface mounting.
Designed for electronic components and discrete semiconductor applications.

Product Description

DiodesZetex BAV199-7-F is a silicon junction switching diode designed for discrete semiconductor applications in electronics and power circuits. It features a compact SOT-23 3-pin surface mount package enabling efficient PCB layout integration. With a maximum forward current of 160 mA and a maximum peak reverse repetitive voltage of 85 V, it is well suited for switching and signal processing tasks.

This diode supports a peak non-repetitive forward surge current of 4 A and a power dissipation of 250 mW, offering resilience to transient surge events. The fast peak reverse recovery time of 3 microseconds allows for high-frequency switching applications.

The diode can function reliably over a wide operating temperature range from -65°C to 150°C, making it suitable for various industrial and electronic environments. Its compact dimensions (2.9 mm length, 2.4 mm width, 1.03 mm height) make it ideal for space-constrained circuit designs.

This component finds applications in industrial electronics, power management, communication devices, and general electronic circuit switching. Its surface mount design facilitates automated assembly and efficient production processes.

Environmentally compliant with no specific standards or automotive certifications, this silicon junction switching diode is a versatile and robust component for engineers and manufacturers.

Handles a peak repetitive reverse voltage of 85 V. Supports maximum power dissipation of 250 mW for reliable performance. Peak non-repetitive forward surge current is 4 A ensuring transient robustness. Fast switching with peak reverse recovery time of 3 microseconds.

Operates in temperature range from -65°C to 150°C for diverse environments. Compact dimensions of 2.9 mm length, 2.4 mm width, and 1.03 mm height for space saving usage. Package type is SOT-23 with 3 pins for easy surface mounting.

Designed for electronic components and discrete semiconductor applications. Explore more Semiconductor and diode products at EnvMart for your industrial and manufacturing needs.