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Nexperia N-Channel MOSFET, 76 A, 60 V Enhancement, 5-Pin LFPAK Surface Mount PSMN8R5-60YS,115

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Nexperia N-Channel MOSFET, 76 A, 60 V Enhancement, 5-Pin LFPAK Surface Mount PSMN8R5-60YS,115

Name: Nexperia N-Channel MOSFET, 76 A, 60 V Enhancement, 5-Pin LFPAK Surface Mount PSMN8R5-60YS,115
Brand: Nexperia
SKU: 214985
Price: 1.25 USD
Availability: InStock

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Category MOSFETs Brand Nexperia Condition New

Specifications

Country of Origin	India
Brand	Nexperia
Height	1.05mm
Length	5mm
Model	PSMN8R5-60YS,115
Width	4.1mm
Mount Type	Surface
Maximum Operating Temperature	175°C
Package Type	LFPAK
Minimum Operating Temperature	-55°C
Pin Count	5
Channel Type	N
Maximum Continuous Drain Current Id	76A
Maximum Drain Source Voltage Vds	60V
Maximum Drain Source Resistance Rds	18.4mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	106W
Typical Gate Charge Qg @ Vgs	39nC
Maximum Gate Source Voltage Vgs	20V

Key Features

This enhancement-mode MOSFET features a maximum drain-source resistance of 18.4 milliohms.
Typical gate charge is 39 nanocoulombs at gate-source voltage.
Maximum power dissipation is rated at 106 watts for high efficiency.
Operating temperature ranges from -55 °C to 175 °C for robust industrial use.
Compact dimensions ensure easy integration with 5 mm length, 4.1 mm width, and 1.05 mm height.
Designed for surface mount applications requiring reliable switching performance.
Suitable for motor control, battery protection, and power supply designs.
Provides excellent switching efficiency with advanced TrenchMOS technology.

Product Description

Nexperia PSMN8R5-60YS,115 is an N-Channel enhancement mode MOSFET designed for applications requiring a maximum continuous drain current of 76 A and a drain-source voltage of 60 V. Packaged in a compact 5-pin LFPAK surface mount package, it supports high power dissipation up to 106 W and operates reliably across a wide temperature range from -55 °C to 175 °C.

Advanced TrenchMOS technology provides low on-resistance of 18.4 milliohms and low typical gate charge of 39 nanocoulombs, enabling efficient switching and power saving in industrial and communication equipment. The device is mechanically robust and provides improved thermal characteristics suitable for high-density power designs.

This MOSFET is particularly suited for motor control, lithium-ion battery protection, load switching, and server power supplies, ensuring stable and efficient operation under demanding conditions. The LFPAK package maximizes power density while maintaining ease of assembly for surface mount technology.

This enhancement-mode N-Channel MOSFET supports a continuous current of 76 A. Maximum drain-source voltage is 60 V to suit medium-voltage circuits. Low gate charge facilitates fast switching performance. Robust operating temperature range supports industrial and commercial applications.

Compact dimensions allow space-saving PCB layouts. Designed for high power dissipation with outstanding thermal management. Offers mechanical strength and reliability for long term use. Compatible with surface mount assembly processes.

The Nexperia PSMN8R5-60YS,115 MOSFET is ideal for a wide range of electronics including industrial automation, power management, communications, and battery-powered equipment. Its balance of electrical performance, mechanical robustness, and proven reliability makes it an excellent choice for engineers designing efficient and compact power solutions.

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