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ROHM N-Channel MOSFET 21 A 650 V Enhancement 3-Pin TO-247N SCT3120ALGC11
Specifications
| Country of Origin | India |
|---|---|
| Brand | ROHM |
| Height | 21mm |
| Length | 16mm |
| Model | SCT3120ALGC11 |
| Width | 5mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247N |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 21A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 158.4mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 103W |
| Typical Gate Charge Qg @ Vgs | 38nC |
| Maximum Gate Source Voltage Vgs | 22V |
| Forward Voltage Vf | 3.2V |
Key Features
- This MOSFET features an enhancement mode channel for efficient switching.
- It has a low maximum drain-source resistance of 158.4 milliohms for reduced power loss.
- The device supports a maximum power dissipation of 103 watts for high reliability.
- Typical gate charge is 38 nC at Vgs, ensuring fast switching performance.
- Operating temperature ranges from -55°C to 175°C, suitable for harsh environments.
- Forward voltage of 3.2 V ensures good conduction efficiency.
- Designed for through-hole mount with a rugged TO-247N package for easy integration.
Product Description
ROHM SCT3120ALGC11 is a high-performance N-Channel MOSFET designed for power electronics applications, featuring a continuous drain current rating of 21 amperes and a maximum drain-source voltage of 650 volts. Housed in a robust 3-pin TO-247N through-hole package, this device is engineered for efficient switching with low on-resistance and fast switching speeds.
The MOSFET operates in enhancement mode and offers a maximum power dissipation of 103 watts, making it suitable for demanding industrial, automotive, and power management applications. Its typical gate charge of 38 nC at a gate-source voltage enables quick switching response, improving overall circuit efficiency.
With an operating temperature range from -55°C to 175°C, this MOSFET can withstand harsh operating environments. The device features a low forward voltage of 3.2 V, optimizing conduction losses. Its through-hole mount and TO-247N package provide durability and ease of installation in electronic assemblies.
Additional product highlights include Pb-free lead plating and compliance with RoHS standards, making it an environmentally friendly choice for modern electronics manufacturing. This MOSFET features an enhancement mode channel for efficient switching.
Low maximum drain-source resistance reduces power losses. High maximum power dissipation rating ensures reliable operation. Fast switching enabled by low typical gate charge. Wide operating temperature range for diverse applications.
Robust TO-247N package suitable for through-hole mounting. Lead-free and RoHS compliant for environmental safety.
The ROHM SCT3120ALGC11 N-Channel MOSFET is ideal for applications in power supply units, motor control, industrial machinery, and automotive electronics requiring high current handling and efficient switching. Explore the Electronics & Electricals category at EnvMart for a wide array of semiconductors and related components to complement your electronic designs.
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Frequently Asked Questions
The maximum continuous drain current of this model is 21 amperes.
This MOSFET supports a maximum drain-source voltage of 650 volts.
The typical gate charge at gate-source voltage (Vgs) is 38 nanocoulombs (nC).
It has a maximum power dissipation rating of 103 watts.
The operating temperature range for this model is from -55°C to 175°C.
This device is housed in a TO-247N package type, designed for through-hole mounting.
The maximum drain-source resistance is 158.4 milliohms.
The forward voltage for this MOSFET is 3.2 volts.
This model features a pin count of 3.
The SCT3120ALGC11 features an N-channel type.
Yes, this device is Pb-free and compliant with RoHS standards.
It is suitable for applications in power supply units, motor control, industrial machinery, and automotive electronics.
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