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STMicroelectronics Schottky Diode 80 V 500 mA Surface Mount MELF TMBAT49FILM
Specifications
| Country of Origin | India |
|---|---|
| Diameter | 2.5mm |
| Brand | STMicroelectronics |
| Height | 2.65mm |
| Length | 5.2mm |
| Model | TMBAT49FILM |
| Width | 2.65mm |
| Mount Type | Surface |
| Series | TMBAT49 |
| Maximum Operating Temperature | 125°C |
| Package Type | MELF |
| Minimum Operating Temperature | -65°C |
| Pin Count | 2 |
| Maximum Continuous Forward Current If | 500mA |
| Peak Reverse Repetitive Voltage Vrrm | 80V |
| Diode Configuration | Single |
| Rectifier Type | Schottky |
| Peak Reverse Current Ir | 200μA |
| Peak Non-Repetitive Forward Surge Current Ifsm | 10A |
| Maximum Forward Voltage Vf | 1V |
Key Features
- This diode features a maximum forward voltage of 1 V for efficient power handling.
- It supports a peak repetitive reverse voltage of 80 V and a peak non-repetitive surge current of 10 A.
- The device operates reliably within temperatures from -65°C up to 125°C.
- The compact MELF package measures 5.2 mm in length, 2.65 mm in width, and 2.5 mm in diameter.
- The diode configuration is single with a low peak reverse current of 200 µA to minimize leakage.
- Ideal for power applications requiring high efficiency and density in a small form factor.
Product Description
STMicroelectronics TMBAT49FILM Schottky Diode is a high-performance discrete semiconductor designed for surface mount applications with a MELF package. The diode supports a maximum continuous forward current of 500 mA and is rated for peak repetitive reverse voltage of 80 V. It features a maximum forward voltage of 1 V, making it suitable for efficient power rectification.
This single diode features a compact 2-pin MELF package with dimensions of length 5.2 mm, width and height 2.65 mm, and diameter 2.5 mm, ideal for densely packed electronic assemblies. Its operating temperature ranges from -65°C to 125°C, ensuring reliability in demanding industrial environments.
The device offers a peak non-repetitive forward surge current of 10 A and a low peak reverse current of 200 µA, enhancing performance by reducing power losses and leakage currents. It is a preferred choice for applications in power electronics, telecommunications, and other industrial sectors requiring efficient and compact Schottky diode solutions.
These diodes comply with industry standards but do not carry specific automotive or special certifications, making them widely applicable for standard industrial use. This diode features a maximum forward voltage of 1 V for efficient power handling.
It supports a peak repetitive reverse voltage of 80 V and a peak non-repetitive surge current of 10 A. The device operates reliably within temperatures from -65°C up to 125°C. The compact MELF package measures 5.2 mm in length, 2.65 mm in width, and 2.5 mm in diameter.
The diode configuration is single with a low peak reverse current of 200 µA to minimize leakage. Ideal for power applications requiring high efficiency and density in a small form factor. Explore more products in the Schottky Diodes & Rectifiers category on EnvMart for further semiconductor solutions.
Explore more products in our Schottky Diodes & Rectifiers category.
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Frequently Asked Questions
The maximum continuous forward current of this Schottky diode is 500 mA.
It supports a peak repetitive reverse voltage of 80 V.
The maximum forward voltage of this model is 1 V.
The MELF package measures 5.2 mm in length, 2.65 mm in width, and has a diameter of 2.5 mm.
The operating temperature range is from -65°C to 125°C.
The peak non-repetitive forward surge current is rated at 10 A.
The peak reverse current is 200 µA, which helps minimize leakage.
This diode has a 2-pin configuration.
It is designed for surface mounting.
The rectifier type is Schottky.
The diode is manufactured in India.
This diode is suitable for power electronics, telecommunications, and other industrial sectors requiring efficient and compact solutions.
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