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| Country of Origin | Japan |
|---|---|
| Brand | Toshiba |
| Height | 0.95mm |
| Length | 2mm |
| Model | HN1A01FU-GR,LF(T |
| Width | 1.25mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 125°C |
| Package Type | SOT-363 |
| Pin Count | 6 |
| Maximum Collector Emitter Voltage Vceo | -50V |
| Minimum DC Current Gain hFE | 120 |
| Transistor Polarity | PNP |
| Maximum Emitter Base Voltage VEBO | -5V |
| Maximum Collector Base Voltage VCBO | -50V |
| Maximum Power Dissipation Pd | 200mW |
| Maximum DC Collector Current Idc | -150mA |
| Transistor Configuration | Dual |
| Maximum Transition Frequency ft | 80MHz |
Toshiba HN1A01FU-GR,LF(T is a dual PNP bipolar transistor designed for surface mount applications, featuring a compact 6-pin SOT-363 package measuring 2 mm in length, 1.25 mm in width, and 0.95 mm in height. It supports a maximum DC collector current of 150 mA and collector-emitter voltage of 50 V, making it suitable for moderate power electronic circuits.
This transistor operates with a maximum frequency of 80 MHz and offers a minimum DC current gain (hFE) of 120, ideal for amplification and switching functions in electronic and industrial devices. It has a maximum power dissipation of 200 mW, ensuring it meets thermal management standards for compact circuits.
The device is engineered to operate reliably up to 125°C, making it appropriate for a range of commercial and industrial applications including consumer electronics, telecommunications, and instrumentation.
The transistor’s dual configuration simplifies circuit design and PCB layout by integrating two PNP transistors in one compact package. The surface mount technology (SMT) form factor supports modern automated assembly processes, enhancing manufacturing efficiency.
Key features include robust voltage and current ratings, high gain, and compact packaging. Designed and manufactured in Japan, the HN1A01FU-GR,LF(T meets demanding quality standards and industrial reliability requirements.
Dual PNP transistor suitable for surface mount applications. Max collector current of 150 mA and voltage of 50 V. High transition frequency of 80 MHz for fast switching. Compact SOT-363 6-pin package ideal for space-constrained designs.
Maximum power dissipation of 200 mW prevents overheating. Minimum current gain of 120 ensures stable amplification. Operating temperature up to 125°C for rugged environments. Manufactured in Japan for superior quality assurance.
This transistor is widely used in electronics manufacturing, semiconductors production, telecommunications equipment, industrial controls, and consumer devices. It enables reliable amplification and switching in compact circuit designs. Explore more Toshiba Bipolar Transistors in the Electronics & Electricals category at EnvMart for high-performance semiconductor solutions.
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