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Toshiba Dual PNP Transistor 150 mA, 50 V, 6-Pin SOT-363 HN1A01FU-GR,LF(T

Category Bipolar Transistors Brand Toshiba Condition New

Specifications

Country of Origin Japan
Brand Toshiba
Height 0.95mm
Length 2mm
Model HN1A01FU-GR,LF(T
Width 1.25mm
Mount Type Surface
Maximum Operating Temperature 125°C
Package Type SOT-363
Pin Count 6
Maximum Collector Emitter Voltage Vceo -50V
Minimum DC Current Gain hFE 120
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -5V
Maximum Collector Base Voltage VCBO -50V
Maximum Power Dissipation Pd 200mW
Maximum DC Collector Current Idc -150mA
Transistor Configuration Dual
Maximum Transition Frequency ft 80MHz

Key Features

  • Dual PNP transistor suitable for surface mounting on PCBs.
  • Maximum DC collector current of 150 mA for efficient current handling.
  • Collector-emitter voltage rating of 50 V ensures robust performance.
  • Maximum power dissipation rated at 200 mW to prevent overheating.
  • High minimum DC current gain (hFE) of 120 for amplification stability.
  • Operating frequency up to 80 MHz for high-speed switching applications.
  • Compact 6-pin SOT-363 package with dimensions 2 mm x 1.25 mm x 0.95 mm.
  • Designed to operate reliably up to 125°C maximum temperature.

Product Description

Toshiba HN1A01FU-GR,LF(T is a dual PNP bipolar transistor designed for surface mount applications, featuring a compact 6-pin SOT-363 package measuring 2 mm in length, 1.25 mm in width, and 0.95 mm in height. It supports a maximum DC collector current of 150 mA and collector-emitter voltage of 50 V, making it suitable for moderate power electronic circuits.

This transistor operates with a maximum frequency of 80 MHz and offers a minimum DC current gain (hFE) of 120, ideal for amplification and switching functions in electronic and industrial devices. It has a maximum power dissipation of 200 mW, ensuring it meets thermal management standards for compact circuits.

The device is engineered to operate reliably up to 125°C, making it appropriate for a range of commercial and industrial applications including consumer electronics, telecommunications, and instrumentation.

The transistor’s dual configuration simplifies circuit design and PCB layout by integrating two PNP transistors in one compact package. The surface mount technology (SMT) form factor supports modern automated assembly processes, enhancing manufacturing efficiency.

Key features include robust voltage and current ratings, high gain, and compact packaging. Designed and manufactured in Japan, the HN1A01FU-GR,LF(T meets demanding quality standards and industrial reliability requirements.

Dual PNP transistor suitable for surface mount applications. Max collector current of 150 mA and voltage of 50 V. High transition frequency of 80 MHz for fast switching. Compact SOT-363 6-pin package ideal for space-constrained designs.

Maximum power dissipation of 200 mW prevents overheating. Minimum current gain of 120 ensures stable amplification. Operating temperature up to 125°C for rugged environments. Manufactured in Japan for superior quality assurance.

This transistor is widely used in electronics manufacturing, semiconductors production, telecommunications equipment, industrial controls, and consumer devices. It enables reliable amplification and switching in compact circuit designs. Explore more Toshiba Bipolar Transistors in the Electronics & Electricals category at EnvMart for high-performance semiconductor solutions.

Toshiba Dual PNP Transistor 150 mA, 50 V, 6-Pin SOT-363 HN1A01FU-GR,LF(T
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