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Toshiba Darlington Transistor NPN 2 A 400 V TO-220 3-Pin TTD1409B,S4X(S

Category Darlington Transistor Brand Toshiba Condition New

Specifications

Country of Origin Japan
Brand Toshiba
Height 15mm
Length 10mm
Model TTD1409B,S4X(S
Mount Type Through Hole
Series TTD1409B
Maximum Operating Temperature 150°C
Package Type TO-220
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Continuous Collector Current Ic 2A
Maximum Collector Emitter Voltage Vceo 400V
Number of Elements per Chip 2
Minimum DC Current Gain hFE 100
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Emitter Saturation Voltage VceSAT 2V
Maximum Collector Base Voltage VCBO 600V
Maximum Collector Cut-off Current 20μA
Toshiba TTD1409B,S4X(S 2 Darlington Transistor NPN, 2 A 400 V HFE 100, 3-Pin TO-220

Key Features

  • High gain bipolar transistor with minimum DC current gain of 100.
  • Designed for through hole mount and comes in a 3-pin TO-220 package.
  • Supports maximum collector emitter saturation voltage of 2 V for efficient switching.
  • Wide operating temperature range from -55°C to 150°C ensuring reliability under diverse conditions.
  • Includes 2 transistor elements per chip for enhanced performance.
  • Maximum collector base voltage rating is 600 V for high voltage applications.
  • Maximum emitter base voltage is 5 V.
  • Maximum collector cut-off current is 20 μA to minimize leakage current.

Product Description

Toshiba TTD1409B,S4X(S Darlington Transistor NPN is engineered with a maximum continuous collector current of 2 A and a collector emitter voltage rating of 400 V, housed in a TO-220 package suitable for through hole mounting. This transistor is ideal for industrial, power management, and electronic circuit applications requiring reliable switching and amplification.

Featuring minimum DC current gain of 100, the device ensures efficient current amplification with two transistor elements built into each chip for enhanced performance. The transistor maintains stable operation over a wide temperature range from -55°C to 150°C, making it suitable for harsh environments found in industrial, automotive, and electronic manufacturing sectors.

The maximum collector emitter saturation voltage of 2 V contributes to energy-efficient switching operations, while the high maximum collector base voltage of 600 V supports high voltage applications. The device's low maximum collector cut-off current of 20 μA helps reduce leakage, improving circuit efficiency.

The TO-220 3-pin package facilitates simple installation in through hole designs commonly used in industrial power supplies, motor controls, and signal processing equipment. Made in Japan, Toshiba guarantees manufacturing quality ensuring consistent performance in rigorous applications.

High power handling and voltage rating for versatile industrial use. Robust thermal performance with broad temperature ratings. Compact TO-220 package for easy mounting and integration. Low leakage current for energy-saving electronic designs.

Ideal for automotive, manufacturing, HVAC, and power supply applications. Explore our full range of semiconductor and Darlington Transistor components to find the perfect fit for your electronic design needs at EnvMart.

Toshiba Darlington Transistor NPN 2 A 400 V TO-220 3-Pin TTD1409B,S4X(S
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