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ams OSRAM 20 ° Infrared Phototransistor Through Hole 2-Pin 5 mm T-1 3/4 Package SFH 313 FA
Specifications
| Country of Origin | India |
|---|---|
| Diameter | 5.1mm |
| Brand | ams OSRAM |
| Height | 9mm |
| Length | 5.9mm |
| Model | SFH 313 FA |
| Width | 5.9mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 100°C |
| Package Type | 5 mm (T-1 3/4) |
| Minimum Operating Temperature | -40°C |
| Number Of Channels | 1 |
| Standards/Approvals | RoHS |
| Number of Pins | 2 |
| Typical Fall Time | 14μs |
| Peak Wavelength | 870nm |
| Spectrums Detected | Infrared |
| Angle of Half Sensitivity | 20 ° |
| Collector Current | 50mA |
| Maximum Dark Current | 200nA |
| Collector Emitter Voltage | 70V |
| Emitter Collector Voltage | 7V |
Key Features
- Operates in the infrared spectrum with peak wavelength at 870 nm.
- Features a maximum collector current of 50 mA and maximum collector emitter voltage of 70 V.
- Has a typical rise and fall time of 14 μs each for fast response.
- Suitable for through-hole mounting with 2-pin configuration in a 5 mm diameter plastic lens package.
- Operating temperature range from -40 °C to 100 °C ensures reliable performance in varied environments.
- Low maximum dark current of 200 nA enables high sensitivity detection.
- RoHS compliant ensuring environmentally safe manufacturing standards.
- Applications include computer-controlled flashes, photointerrupters, industrial electronics, and control/drive circuits.
Product Description
ams OSRAM SFH 313 FA is a 20 ° Infrared Phototransistor designed for through-hole mounting in a 5 mm (T-1 3/4) package. This NPN silicon phototransistor is optimized for infrared detection applications, featuring a peak wavelength sensitivity at 870 nm and very low dark current.
The device comes with a durable plastic lens and a 2-pin configuration suitable for insertion into standard through-hole PCBs. It supports a maximum collector current of 50 mA and can safely operate with collector emitter voltage up to 70 V. The typical response times for rise and fall are 14 microseconds, providing swift detection capability.
Operating reliably across a temperature range from -40 °C to 100 °C, the SFH 313 FA phototransistor meets RoHS standards and offers environmental safety compliance. Its compact dimensions of 5.9 mm length, 5.9 mm width, 5.1 mm diameter, and 9 mm height make it ideal for tight electronic assemblies.
Typical applications include use in computer-controlled flashes, photointerrupters, industrial electronic sensors, and control or drive circuits requiring accurate infrared detection. This device enhances the efficiency and performance of optoelectronic equipment in industrial, laboratory, and manufacturing environments.
Operates in the infrared spectrum with peak wavelength at 870 nm. Maximum collector current of 50 mA and collector emitter voltage of 70 V. Typical rise and fall times of 14 μs for fast switching performance. Through-hole mounting with 2-pin 5 mm plastic lens package.
Wide operating temperature range from -40 °C to 100 °C. Very low maximum dark current of 200 nA enhances sensitivity. Compact physical dimensions suitable for a variety of electronics. RoHS compliant and environmentally safe production.
Applicable in computer-controlled flashes, photointerrupters, and industrial electronics. Explore more Phototransistor options and infrared detection devices on EnvMart for your industrial and electronic component needs.
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Frequently Asked Questions
The SFH 313 FA has a peak wavelength sensitivity at 870 nm, optimized for infrared detection applications.
This model supports a maximum collector current of 50 mA, allowing for effective operation in various applications.
The maximum collector emitter voltage for this phototransistor is 70 V, ensuring safe operation within specified limits.
The typical rise and fall time for the SFH 313 FA is 14 μs each, providing fast response for detection applications.
This phototransistor has dimensions of 5.9 mm in length, 5.9 mm in width, 5.1 mm in diameter, and a height of 9 mm.
The SFH 313 FA operates reliably across a temperature range from -40 °C to 100 °C, suitable for varied environments.
This phototransistor is designed for through-hole mounting with a 2-pin configuration, making it compatible with standard PCBs.
Yes, the SFH 313 FA is RoHS compliant, ensuring it meets environmentally safe manufacturing standards.
This phototransistor is suitable for applications including computer-controlled flashes, photointerrupters, and industrial electronics.
The SFH 313 FA has a very low maximum dark current of 200 nA, enhancing its sensitivity for detection purposes.
The angle of half sensitivity for the SFH 313 FA is 20 °, which defines its effective detection range.
The SFH 313 FA is manufactured in India, reflecting its production location.
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