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ams OSRAM Visible Light Infrared Phototransistor Through Hole 2-Pin 5 mm (T-1 3/4) Package SFH 300-3/4

Category Phototransistor Brand ams OSRAM Condition New

Specifications

Country of Origin India
Diameter 5.1mm
Brand ams OSRAM
Height 9mm
Length 5.9mm
Model SFH 300-3/4
Width 5.9mm
Mount Type Through Hole
Maximum Operating Temperature 100°C
Package Type 5 mm (T-1 3/4)
Minimum Operating Temperature -40°C
Number Of Channels 1
Standards/Approvals RoHS
Number of Pins 2
Typical Fall Time 10μs
Peak Wavelength 880nm
Spectrums Detected Visible Light, Infrared
Angle of Half Sensitivity 50 °
Collector Current 50mA
Maximum Light Current 7700μA
Maximum Dark Current 50nA
Collector Emitter Voltage 35V
Emitter Collector Voltage 7V

Key Features

  • Detects both visible and infrared light spectra effectively.
  • Typical rise and fall times of 10 microseconds enable fast response.
  • Peak wavelength detection at 880 nm for infrared applications.
  • Maximum light current of 7700 microamperes ensures strong output signals.
  • Operates reliably between -40°C and 100°C for industrial environments.
  • Compact dimensions with a 5.1 mm diameter and 5.9 mm width.
  • Collector current rated up to 50 mA for wide usage scenarios.
  • Complies with RoHS environmental standards for safe use.

Product Description

ams OSRAM SFH 300-3/4 is a high-performance phototransistor designed to detect visible light and infrared spectra. Featuring a 5 mm (T-1 3/4) through-hole package with two pins, this component provides fast response times with typical rise and fall times of 10 microseconds, making it suitable for precise light sensing applications in electronics.

This phototransistor operates over a wide temperature range from -40°C to 100°C, ensuring reliable performance in industrial, commercial, and laboratory environments. Its compact size - with diameter measuring 5.1 mm and width and length both at 5.9 mm - facilitates easy integration on circuits without demanding significant board space.

The device supports a maximum collector current of 50 mA and voltage ratings of 35 V between collector and emitter and 7 V between emitter and collector, accommodating flexible application requirements. Its peak wavelength sensitivity is centered at 880 nm, optimized for infrared detection, while its angle of half sensitivity is 50°, allowing for effective light capture within moderate fields of view.

Manufactured according to RoHS compliance, the SFH 300-3/4 eliminates use of hazardous substances, aligning with environmental safety standards. The through-hole mount design with two pins ensures secure mechanical connection and ease of assembly in electronic manufacturing.

Detects visible and infrared light spectra. Typical fall and rise time of 10 microseconds for rapid sensing. Peak wavelength at 880 nm optimized for infrared applications. Maximum light current of 7700 microamperes ensures robust output signals.

Operating temperature range from -40°C to 100°C for industrial reliability. Compact 5 mm through-hole package supports easy PCB mounting. Voltage ratings: 35 V collector-emitter, 7 V emitter-collector. Complies with RoHS environmental standards.

Maximum collector current of 50 mA supports diverse use cases. 2-pin interface for simple electronic integration.

This ams OSRAM phototransistor is ideal for applications requiring visible and infrared light detection in electronic components, optoelectronics, and industrial sensors. Its robust specifications suit usage in manufacturing equipment, lighting systems, instrumentation, and automatic control devices.

Explore a comprehensive range of Phototransistors and optoelectronic components in the Electronics & Electricals category at EnvMart for your next projects.

ams OSRAM Visible Light Infrared Phototransistor Through Hole 2-Pin 5 mm (T-1 3/4) Package SFH 300-3/4
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Frequently Asked Questions

The peak wavelength sensitivity of this phototransistor is centered at 880 nm, which is optimized for infrared detection.

The maximum collector current for this model is 50 mA, allowing for a wide range of applications.

This phototransistor has a diameter of 5.1 mm, a width of 5.9 mm, and a height of 9 mm, making it compact for easy integration.

It operates reliably within a temperature range of -40°C to 100°C, suitable for industrial environments.

The typical rise and fall times for this phototransistor are both 10 microseconds, enabling fast response in light sensing applications.

It supports a collector-emitter voltage of 35 V and an emitter-collector voltage of 7 V.

This phototransistor features a 2-pin interface for simple electronic integration.

It detects both visible light and infrared spectra, making it versatile for various applications.

The angle of half sensitivity for this phototransistor is 50°, allowing effective light capture within moderate fields of view.

This model complies with RoHS environmental standards, ensuring it is free from hazardous substances.

The maximum light current is 7700 microamperes, which ensures strong output signals.

The country of origin for this phototransistor is India.

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