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Taiwan Semiconductor Silicon Junction Switching Diode 2-Pin DO-35, 150 mA, 100 V, 4 ns Recovery Time 1N4148 A0

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Taiwan Semiconductor Silicon Junction Switching Diode 2-Pin DO-35, 150 mA, 100 V, 4 ns Recovery Time 1N4148 A0

Name: Taiwan Semiconductor Silicon Junction Switching Diode 2-Pin DO-35, 150 mA, 100 V, 4 ns Recovery Time 1N4148 A0
Brand: Taiwan Semiconductor
SKU: 201964
Price: 0.02 USD
Availability: InStock

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Category Semiconductor Diodes Brand Taiwan Semiconductor Condition New

Specifications

Country of Origin	India
Diameter	2.28mm
Brand	Taiwan Semiconductor
Height	2.3mm
Length	5.08mm
Model	1N4148 A0
Width	2.3mm
Mount Type	Through Hole
Maximum Operating Temperature	150°C
Package Type	DO-35
Sub Type	Silicon Junction
Minimum Operating Temperature	-65°C
Pin Count	2
Maximum Power Dissipation Pd	500mW
Diode Configuration	Single
Peak Non-Repetitive Forward Surge Current Ifsm	2A
Maximum Forward Voltage Vf	1V
Peak Reverse Recovery Time trr	4ns
Maximum Forward Current If	150mA
Maximum Peak Reverse Repetitive Voltage Vrrm	100V

Key Features

This diode features a fast peak reverse recovery time of 4 nanoseconds.
Designed for through-hole mounting with a DO-35 package type.
Maximum forward voltage is 1 volt, suitable for small signal switching applications.
Operates reliably from -65°C to a maximum of 150°C ambient temperature.
Can withstand a peak non-repetitive forward surge current of 2 amperes.
Compact physical dimensions with length of 5.08 mm and diameter of 2.28 mm.
Ideal for electronic circuits requiring fast switching and low power dissipation of 500 mW.
Features two pins for easy integration in discrete semiconductor circuits.

Product Description

Taiwan Semiconductor 1N4148 A0 silicon junction switching diode is a high-performance component designed for fast switching electronic applications. It comes in a 2-pin DO-35 through-hole package, facilitating easy mounting in circuit boards.

Operating with a maximum forward current rating of 150 mA and capable of handling up to 100 V peak reverse repetitive voltage, this diode balances performance and reliability. The device features a fast peak reverse recovery time of 4 nanoseconds, enabling quick switching cycles in signal processing.

With a maximum forward voltage of 1 V and a power dissipation rating of 500 mW, it is excellent for low power signal applications. The diode operates safely in a wide temperature range from -65°C to 150°C, supporting diverse environmental conditions.

Physically compact, its length is 5.08 mm with a diameter of 2.28 mm, making it suitable for dense electronic assemblies. The device can endure peak non-repetitive forward surge currents up to 2 A, enhancing robustness during transient conditions.

This diode offers reliable silicon junction technology for small signal switching tasks. The through-hole DO-35 package type supports durable mechanical stability. Suitable for various industrial, laboratory, and electronic manufacturing applications where fast switching diodes are required.

It is an essential component for electronic hobbyists and professional engineers designing analog and digital circuits. The diode is RoHS compliant and designed for general electronic components use. Explore more components and semiconductor devices optimized for electronics and electrical engineering projects at EnvMart.

Explore more products in our Semiconductor Diodes category.