ROHM N-Channel MOSFET, 200 mA, 50 V Enhancement, 3-Pin SOT-23 RYC002N05T316

ROHM RYC002N05T316 is a high-performance N-Channel MOSFET transistor designed for diverse electronic applications requiring low current and low voltage switching. Rated for a maximum continuous drain current of 200 mA and a drain-source voltage of 50 V, it operates in enhancement mode to provide efficient switching characteristics.

This MOSFET is housed in a compact 3-pin SOT-23 surface-mount package, making it ideal for space-constrained designs. The device features a low maximum drain-source resistance of 9 ohms, reducing conduction losses and improving overall circuit efficiency.

Thermal reliability is ensured with a maximum power dissipation of 350 mW, and the device safely operates within a wide temperature range of -55°C to 150°C. It also supports a typical gate charge of 26 nC at gate-source voltage, enabling rapid device switching suitable for high-speed electronic circuits.

The gate-source voltage can tolerate from -8 V to +8 V, protecting the MOSFET against gate voltage spikes. Forward voltage is rated at 1.2 V to optimize current conduction while minimizing energy loss.

With compact physical dimensions of 3.1 mm length, 1.5 mm width, and 1.15 mm height, the ROHM RYC002N05T316 MOSFET is well-suited for surface mount technology (SMT) assembly on printed circuit boards (PCBs). It finds application in power management circuits, switching devices, signal amplification, and other industrial electronics fields including automation and instrumentation.

This product ensures high reliability, efficient performance, and ease of integration in electronic designs. It is a vital component for manufacturing, laboratory equipment, and advanced electronics requiring precise power control.

The device operates in enhancement mode for efficient switching performance. Maximum power dissipation is 350 mW ensuring reliable thermal performance. Features a maximum drain-source resistance of 9 ohms for low conduction loss.

Supports a typical gate charge of 26 nC at Vgs for fast switching. Operating temperature range spans from -55°C to 150°C for versatile applications. Compact dimensions with 3.1 mm length, 1.5 mm width, and 1.15 mm height enable PCB space savings.

Maximum gate-source voltage rating of -8 to +8 V ensures device protection. Forward voltage rating is 1.2 V for current conduction efficiency. Suitable for surface mount applications in various electronic circuits. Explore more ROHM semiconductor components and discrete MOSFETs within EnvMart to meet your project needs efficiently.