onsemi Transistor 1.5 A NPN 60 V 3-Pin TO-225 Through Hole BD137G

onsemi BD137G Transistor is a general-purpose NPN bipolar transistor engineered for reliable switching and amplification duties in electronic circuits. With a maximum collector current rating of 1.5 A and a voltage tolerance of up to 60 V, it is well suited for discrete component applications requiring moderate power handling.

Housed in a 3-pin TO-225 package optimized for through-hole mounting, this transistor ensures robust mechanical stability and excellent thermal dissipation. Operating across temperatures from -55°C to 150°C, it can maintain performance in challenging industrial, laboratory, and manufacturing environments.

The transistor's electrical specifications include a minimum DC current gain (hFE) of 25, maximum power dissipation of 1.25 W, and voltage ratings including collector-emitter (60 V), collector-base (60 V), and emitter-base (5 V). The compact physical dimensions (27.73 mm length, 7.8 mm width, and 3 mm height) enable integration into densely packed circuit boards.

This component is ideal for applications in power control, amplification, and switching tasks in sectors such as industrial automation, consumer electronics, automotive non-AEC-Q101, and general electronic development and prototyping.

The transistor features a maximum DC collector current of 1.5 amperes. It has a collector emitter voltage rating of 60 volts. Designed with a single transistor configuration and NPN polarity. Maximum power dissipation rated at 1.25 watts for safe operating limits.

It operates efficiently over a temperature range from -55°C to 150°C. The device includes 3 pins configured in a TO-225 package for easy mounting. It provides a minimum current gain (hFE) of 25, ensuring amplification performance.

Maximum collector base and emitter base voltages are 60 V and 5 V respectively. Compact dimensions: length 27.73 mm, width 7.8 mm, height 3 mm. Suitable for general purpose power transistor applications in electronic circuits.

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