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ROHM N-Channel MOSFET, 200 mA, 20 V Enhancement Type, 3-Pin SOT-723 Package RUM002N02T2L

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ROHM N-Channel MOSFET, 200 mA, 20 V Enhancement Type, 3-Pin SOT-723 Package RUM002N02T2L

Name: ROHM N-Channel MOSFET, 200 mA, 20 V Enhancement Type, 3-Pin SOT-723 Package RUM002N02T2L
Brand: ROHM
SKU: 196112
Price: 0.1 USD
Availability: InStock

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Category MOSFET Brand ROHM Condition New

Specifications

Country of Origin	India
Brand	ROHM
Height	450μm
Length	1.3mm
Model	RUM002N02T2L
Width	900μm
Mount Type	Surface
Series	RUM002N02
Maximum Operating Temperature	150°C
Package Type	SOT-723
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	200mA
Maximum Drain Source Voltage Vds	20V
Maximum Drain Source Resistance Rds	4.8Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	150mW
Maximum Gate Source Voltage Vgs	-8, +8V
Forward Voltage Vf	1.2V

Key Features

This MOSFET operates in enhancement channel mode for efficient switching performance.
The device supports a maximum drain-source resistance of 4.8 Ω ensuring stable operation.
It has a maximum gate-source voltage range of -8 V to +8 V.
The MOSFET can dissipate power up to 150 mW and supports operating temperatures between -55°C and 150°C.
Its compact dimensions are 1.3 mm length, 900 μm width, and 450 μm height suitable for surface mounting.
The forward voltage is rated at 1.2 V enabling low voltage operation.
This product does not conform to automotive standards but is ideal for general semiconductor uses.
The 3-pin configuration and surface mount type make it compatible with PCB assembly processes.

Product Description

The ROHM RUM002N02T2L is an N-Channel Enhancement Mode MOSFET designed for low current switching applications. With a maximum continuous drain current of 200 mA and a maximum drain-source voltage of 20 V, this device offers robust performance in a compact 3-pin SOT-723 surface mount package.

Its 4.8 Ω maximum drain-source resistance and 1.2 V forward voltage contribute to efficient power handling, while operation within a temperature range of -55°C to 150°C ensures reliability across various industrial environments.

The MOSFET supports a maximum gate-source voltage of ±8 V, allowing flexibility in drive voltage requirements. The surface mount package with compact dimensions (1.3 mm length, 900 μm width, 450 μm height) facilitates high-density PCB designs typical in electronics manufacturing and prototyping.

This transistor is suitable for applications in power management, signal switching, and load driving within commercial electronics and industrial equipment. While not certified for automotive standards, it performs well as part of semiconductor discrete component assemblies.

This MOSFET operates in enhancement mode for effective switching. Low on-resistance of 4.8 Ω reduces conduction losses. Compact SOT-723 package supports automated PCB assembly. Wide operating temperature range from -55°C to 150°C.

Maximum power dissipation of 150 mW for thermal stability. Maximum gate-source voltage range of -8 V to +8 V. Forward voltage of 1.2 V enables efficient voltage drop characteristics. Surface mount design suits modern electronic manufacturing processes.

This product is ideal for integration into electronic components, semiconductor discrete circuits, and power module assemblies. It is commonly used in industrial, commercial, and laboratory electronic device manufacturing.

Explore more semiconductor components and MOSFET products on EnvMart for diverse applications and industrial needs.