ROHM Type P-Channel MOSFET 25 A 100 V Enhancement Mode 3-Pin TO-263 RSJ250P10

ROHM RSJ250P10 is a P-Channel MOSFET designed for power switching applications, enabling efficient power management in electronic circuits. It features a maximum continuous drain current of 25 A and can withstand up to 100 V drain-source voltage, ensuring robust performance for moderate power loads.

This device operates in enhancement mode, providing an effective switching mechanism suitable for various industrial and commercial electronics, including power supplies, motor control, and voltage regulation. Packaged in a 3-pin TO-263 surface mount case, the MOSFET offers compact size for space-constrained PCB designs.

The MOSFET supports a maximum gate-source voltage ranging from -20 V to +20 V and has a gate charge of 60 nC, facilitating fast switching speeds with minimal losses. Its power dissipation rating is 50 W, allowing for reliable operation under demanding thermal conditions.

Dimensions of 10.1 mm length, 9 mm width, and 4.5 mm height ensure ease of integration. The device operates over a wide temperature range from -55°C to 150°C, making it suitable for harsh environmental conditions encountered in automotive and industrial sectors. Its low maximum drain-source resistance of 70 mΩ contributes to efficient conduction and reduced heat generation.

The forward voltage of -1.2 V supports low voltage drop applications, making this MOSFET ideal for power efficient electronics. Its surface mount TO-263 package simplifies manufacturing and assembly processes.

The device operates in enhancement mode for reliable switching performance. The maximum power dissipation rating is 50 W for robust thermal management. It supports a maximum gate-source voltage range from -20 V to +20 V.

The package dimensions are compact with length 10.1 mm, width 9 mm, and height 4.5 mm. Typical gate charge is 60 nC at Vgs, resulting in efficient gate driving. The MOSFET has a maximum drain-source resistance of 70 mΩ reducing conduction losses.

Operating temperature ranges from -55°C to a maximum of 150°C, ensuring durability in harsh environments. Forward voltage drop is -1.2 V, suitable for low power dissipation applications. Surface mount TO-263 package facilitates easy PCB mounting and assembly.

This MOSFET is suitable for industrial electronics, power management, automotive electronics, and various commercial applications requiring efficient switching and power control. Explore more power semiconductor devices in EnvMart’s Semiconductor category for comprehensive solutions.