ROHM P-Channel Enhancement Mode MOSFET, 100 mA 20 V, Surface Mount SOT-416 Package RE1C001ZPTL

ROHM RE1C001ZPTL is a P-Channel Enhancement Mode MOSFET transistor optimized for surface mount technology using a 3-pin SOT-416 package. It supports a maximum continuous drain current of 100 mA and a maximum drain-source voltage of 20 V, making it ideal for low voltage and low current electronic circuits.

Designed with efficiency in mind, this MOSFET offers a channel resistance of up to 40 Ω, enhancing switching performance. The maximum power dissipation is specified at 150 mW, allowing it to handle moderate power loads effectively while maintaining thermal stability.

The device operates reliably in a temperature range from -55°C up to 150°C, suitable for industrial, consumer electronics, and automotive applications that require robust thermal tolerances. Its compact dimensions - 1.7 mm in length, 900 μm width, and 700 μm height - facilitate dense PCB layouts and space-saving designs.

This MOSFET's gate voltage limits are ±10 V, with a forward voltage of -1.2 V, ensuring compatibility with common driver voltage levels. The surface mount package type SOT-416 enables easy automated mounting processes and effective PCB integration.

ROHM components are known for quality and reliability, making the RE1C001ZPTL a suitable choice for use in electronic manufacturing, semiconductor integration, power management circuits, and signal switching.

Applications include low power switching, amplification circuits, and electronic load management in consumer and industrial products. This P-Channel MOSFET features 100 mA maximum continuous drain current for low-power switching.

Maximum drain-source voltage is rated at 20 V, suitable for low voltage electronic circuits. The device includes a 3-pin SOT-416 surface mount package, facilitating compact PCB layouts. Enhancement channel mode provides efficient switching performance with 40 Ω maximum drain-source resistance.

Operational temperature range extends from -55°C to 150°C, ensuring reliable performance in varied environments. Maximum power dissipation of 150 mW supports moderate load conditions in electronic designs. With a length of 1.7 mm, width of 900 μm, and height of 700 μm, the compact form factor aids in miniaturized applications.

Explore the comprehensive range of semiconductor and MOSFET components on EnvMart to find suitable products for your electronic and industrial projects.