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Nexperia PNP Transistor, Low Saturation Voltage, 2 A Maximum DC Collector Current, -20 V Collector Emitter PBSS5220T,215

Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin China
Brand Nexperia
Height 1.1mm
Length 3mm
Model PBSS5220T,215
Width 2.5mm
Mount Type Surface
Series PBSS5220T
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -65°C
Standards/Approvals RoHS
Pin Count 3
Maximum Collector Emitter Voltage Vceo -20V
Minimum DC Current Gain hFE 150
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 20V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 480mW
Maximum DC Collector Current Idc -2A
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz

Key Features

  • Low saturation voltage reduces heat generation.
  • Designed for surface mounting in compact spaces.
  • High current capacity of -2 A for efficient switching.
  • Wide operating temperature range from -65°C to 150°C.
  • High minimum DC current gain of 150 for reliable amplification.
  • Meets automotive standard AEC-Q101 for quality assurance.
  • Maximum power dissipation is 480 mW for stable operation.
  • RoHS compliant with environmental safety standards.

Product Description

Nexperia PBSS5220T,215 is a high-performance PNP bipolar transistor designed for use in industrial, automotive, and electronic applications. Featuring a maximum DC collector current of 2 A and collector emitter voltage rating of -20 V, this device is housed in a compact 3-pin SOT-23 package that supports surface mount technology, optimizing PCB space while maintaining robust electrical performance.

The transistor's low saturation voltage ensures reduced power losses and lower heat generation, enhancing overall efficiency in switching and amplification circuits. It supports a wide range of operating temperatures from -65°C to 150°C, making it suitable for harsh environments including automotive electronics compliant with AEC-Q101 standards.

With a high minimum DC current gain (hFE) of 150, the PBSS5220T,215 enables reliable signal amplification in discrete semiconductor applications. Its maximum power dissipation of 480 mW supports stable operation under demanding electrical loads. The device also features a maximum transition frequency of 100 MHz, facilitating fast switching capabilities for digital and switching power circuits.

Compact package dimensions (length 3 mm, width 2.5 mm, height 1.1 mm) and adherence to RoHS directives guarantee minimal environmental impact and ease of integration into high-density designs. This transistor is ideally suited for use in discrete semiconductor solutions for power management, industrial controls, and automotive electronic systems.

Low saturation voltage reduces losses and heat generation. High current rating supports demanding load requirements. Compact SOT-23 package for space-saving PCB layouts. Wide temperature tolerance suits harsh operating conditions.

Compliant with automotive quality standard AEC-Q101. RoHS certified ensuring environmentally safe manufacturing. High frequency transition rate enables fast switching. Surface mount device for automated assembly processes.

Optimal for power management and digital switching applications.

This Nexperia PNP transistor is a reliable choice for electrical engineers seeking efficient and compact discrete semiconductor components for diverse industrial uses. Explore EnvMart's extensive catalog of Bipolar Transistors for complementary products and components.

Nexperia PNP Transistor, Low Saturation Voltage, 2 A Maximum DC Collector Current, -20 V Collector Emitter PBSS5220T,215
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Frequently Asked Questions

The maximum DC collector current for this model is -2 A.

The collector-emitter voltage rating is -20 V.

The dimensions of the SOT-23 package are 3 mm in length, 2.5 mm in width, and 1.1 mm in height.

The minimum DC current gain (hFE) is 150.

The operating temperature range is from -65°C to 150°C.

The maximum power dissipation is 480 mW.

This model complies with the automotive standard AEC-Q101.

The maximum transition frequency is 100 MHz.

This transistor supports surface mounting.

The minimum operating temperature is -65°C.

The maximum emitter-base voltage (VEBO) is 5 V.

The maximum collector-base voltage (VCBO) rating is 20 V.

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